Huaisheng Wang

Soochow University — China

Engineering · Physical Sciences

13h-index471citations64works0.02yr avg
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Research Topics

Thin-Film Transistor Technologies(41), Semiconductor materials and devices(20), Advancements in Semiconductor Devices and Circuit Design(17), Silicon and Solar Cell Technologies(11), ZnO doping and properties(7)

Publications64 total

Research on the dynamic characteristics of ultrathin body and buried oxide SOI MOSFETs with novel source-drain extensions
2025
Performance enhancement in 3D transistors: A TCAD simulation-based study of FinFETs and GAAFETs with novel source-drain extensions
Micro and Nanostructures·2025
Reliability Investigation of Interdigital-Structured a-IGZO TFTs under DC Gate-Drain Stress
2025
Ambient Dependent Metal Interconnection Failure of Flexible Poly-Si TFTs Under Dynamic Stretch Stress
2025
A TCAD Study of Analog Figures of Merit of Ultrathin Body and Buried Oxide SOI MOSFETs with Non-LDD Source/Drain Extensions
2024
Degradation Comparison of P-type Thin Film Transistor under Dynamic Gate Pulsed Stress
2024
Ambient Dependent Degradation Behavior of Flexible Poly-Si TFTs Under Dynamic Stretch Stress
2023· 2 cited
Investigations on the Light-Induced Degradation of P-Channel Poly-Silicon Thin Film Transistors
2023· 1 cited
Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress
Chinese Physics B·2022
Federated-LSTM based Network Intrusion Detection Method for Intelligent Connected Vehicles
ICC 2022 - IEEE International Conference on Communications·2022· 29 cited
Gate Voltage Pulse Rising Edge Dependent Dynamic Hot Carrier Degradation in Poly-Si Thin-Film Transistors
IEEE Electron Device Letters·2021· 13 cited
Roles of Gate Voltage and Stress Power in Self-Heating Degradation of a-InGaZnO Thin-Film Transistors
IEEE Transactions on Electron Devices·2021· 14 cited
A Unified Degradation Model of Elevated-Metal Metal Oxide (EMMO) TFTs Under Positive Gate Bias With or Without an Illumination
IEEE Transactions on Electron Devices·2021· 11 cited
Exploration on the Experimental Teaching Mode Based on Scientific Research Penetration from the Perspective of Ideological and Political Courses
University Chemistry·2021Open Access
Investigations on the Negative Shift of the Threshold Voltage of Polycrystalline Silicon Thin-Film Transistors Under Positive Gate Bias Stress
IEEE Transactions on Electron Devices·2020· 9 cited
Reliability of Flexible LTPS TFTs under Dynamic Mechanical Stress
2020· 2 cited
A systematic study of light dependency of persistent photoconductivity in a-InGaZnO thin-film transistors*
Chinese Physics B·2020· 12 cited
Origin of Spontaneous Degradation of Flexible Poly-Si TFTs After Dynamic Bending
IEEE Electron Device Letters·2020· 9 cited
Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors
IEEE Transactions on Electron Devices·2020· 18 cited
A Physical-Based Analytical Model for the Kink Current of Polycrystalline Silicon TFTs
IEEE Transactions on Electron Devices·2020· 2 cited
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Frequent Co-authors

Mingxiang Wang(32), Dongli Zhang(25), Qi Shan(9), Wei Jiang(5), Man Wong(4), Meng Zhang(3), Yanwen Wu(3), Zhenyu Yang(2), Pengfei Li(2), Changhe Zhou(2), Liren Liu(2), Nannan Lv(2), Zening Wang(2), Wen‐Jiao Liao(2), Tsung-Wei Lien(2), Chang‐Fa Yang(2), Chin-Chung Nien(2), Ting Gao(2), Lekai Chen(2), Yining Yu(2)