Valeri Afanas’ev

IMEC — Belgium

Engineering · Physical Sciences

27h-index2.0kcitations191works3.82yr avg
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Research Topics

Semiconductor materials and devices(112), Semiconductor materials and interfaces(47), Ferroelectric and Negative Capacitance Devices(28), Advanced Memory and Neural Computing(24), Advancements in Semiconductor Devices and Circuit Design(24)

Publications191 total

Experimental electron band alignment of 1T’and 2H MoTe2/SiO2 interface using internal photoemission spectroscopy
Journal of Electron Spectroscopy and Related Phenomena·2025
Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS2 FETs
2025Open Access
Analysis of Angle Resolved X-ray Photoelectron Emission Spectra of Highly Oriented Pyrolytic Graphite
Поверхность Рентгеновские синхротронные и нейтронные исследования / Journal of Surface Investigation X-Ray Synchrotron and Neutron Techniques·2025
Optimizing electrical AFM probing for 2D materials: The crucial role of tip-sample electrical interactions and back contact configurations
Materials Science in Semiconductor Processing·2024· 5 citedOpen Access
Novel Design Strategy for High-Endurance $(> 10^{10})$ and Fast-Erase Oxide-Semiconductor Channel FeFET
2024· 4 cited
Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs
ACS Applied Materials & Interfaces·2024· 4 cited
Understanding the Time Dependent Write and Read Performance of IGZO-channel FeFETs
2024
Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs
npj 2D Materials and Applications·2024· 6 citedOpen Access
A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs
IEEE Electron Device Letters·2024· 5 cited
Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification
2024· 1 citedOpen Access
Electron emission from deep traps in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>HfO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> under thermal and optical excitation
Physical review. B./Physical review. B·2024· 7 citedOpen Access
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory
2024· 15 citedOpen Access
Experimental study of time-dependent dielectric degradation by means of random telegraph noise spectroscopy
Solid-State Electronics·2024· 2 citedOpen Access
Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures
Solid-State Electronics·2024· 1 cited
Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si19.svg" display="inline" id="d1e237"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> dielectric for 2.5D MIMCAPs
Solid-State Electronics·2024· 3 citedOpen Access
Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density
physica status solidi (RRL) - Rapid Research Letters·2024· 11 citedOpen Access
Direct Evidence of Contact-Induced Variability in Industrially-Fabricated Highly-Scaled MoS2 FETs
2024Open Access
Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor
Solid-State Electronics·2023· 2 cited
Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor
IEEE Transactions on Electron Devices·2023· 33 cited
Topological phases in two-dimensional transition metal halides and oxides
2023· 1 cited
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Frequent Co-authors

Sergiu Clima(9), A. Stesmans(9), Gerhard Pensl(9), Jan Van Houdt(9), Gouri Sankar Kar(8), Alexander L. Shluger(7), Daniele Garbin(7), Wouter Devulder(7), Gabriele Luca Donadio(7), Shreya Kundu(7), Hubert Hody(7), Taras Ravsher(6), A. Fantini(6), R. Degraeve(6), Florin Ciobanu(5), Michel Houssa(5), Romain Delhougne(5), Marc Heyns(4), Tsunenobu Kimoto(4), Milan Pešić(4)