Oleg Gluschenkov

IBM (United States) — United States

Engineering · Physical Sciences

15h-index831citations53works6.72yr avg
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Research Topics

Semiconductor materials and devices(32), Advancements in Semiconductor Devices and Circuit Design(27), Integrated Circuits and Semiconductor Failure Analysis(18), Ferroelectric and Negative Capacitance Devices(7), Thin-Film Transistor Technologies(5)

Publications53 total

NanoStack Transistor Architecture for CMOS 7A Node and Beyond
2025· 4 cited
Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices
2025
Backside Power Distribution for Nanosheet Technologies Beyond 2nm
2024· 16 cited
Impact of nanosecond laser annealing on vacancies in electroplated Cu films studied by monoenergetic positron beams
Journal of Applied Physics·2023· 2 cited
Contact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10<sup>-9</sup> Ω.cm<sup>2</sup> Contact Resistivity in Nonplanar FETs
2023· 5 cited
Improving FinFET Junctions and Contacts via Laser Annealing
2023· 3 cited
Advanced BEOL Materials, Processes, and Integration to Reduce Line Resistance of Damascene Cu, Co, and Subtractive Ru Interconnects
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)·2022· 9 cited
Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration
2022 6th IEEE Electron Devices Technology &amp; Manufacturing Conference (EDTM)·2022· 5 cited
Advanced BEOL Interconnects
2020· 13 cited
Energy Density and Temperature Calibration for FEOL Nanosecond Laser Annealing
2020
FEOLナノ秒レーザアニーリングのためのエネルギー密度と温度キャリブレーション【JST・京大機械翻訳】
IEEE Conference Proceedings·2020
External Resistance Reduction by Nanosecond Laser Anneal in Si/SiGe CMOS Technology
2018· 12 cited
Parasitic Resistance Reduction Strategies for Advanced CMOS FinFETs Beyond 7nm
2018· 35 cited
Simulation of 3D Doping by Plasma Immersion Ion Implantation for FinFET or deep Trench Doping Applications. Effect of main Process Parameters and Study of Wall Doping Non-Uniformity as Function of Form Factor and Device Scaling
2018
Analytical TEM Characterization of Source/Drain Contacts in Advanced Semiconductor Devices
Microscopy and Microanalysis·2018Open Access
(Invited) Laser Annealing in CMOS Manufacturing
ECS Meeting Abstracts·2018
(Invited)<i />Laser Annealing in CMOS Manufacturing
ECS Transactions·2018· 18 cited
Integrated dual SPE processes with low contact resistivity for future CMOS technologies
2017· 12 cited
Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability
2017· 11 cited
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
2016· 10 cited
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Frequent Co-authors

R. Divakaruni(10), Hiroaki Niimi(9), J. Demarest(8), Dechao Guo(8), Praneet Adusumilli(7), Shogo Mochizuki(7), Yasir Sulehria(7), Jody Fronheiser(6), Shinichi Mochizuki(6), Zuoguang Liu(6), Huiming Bu(6), Tenko Yamashita(6), Michael Belyansky(6), C. Lavoie(6), Adra Carr(6), Vijay Narayanan(6), Bala Haran(5), Nelson Felix(5), Walter Kleemeier(5), T. Yamashita(5)