Zheyang Zheng

Physics and Astronomy · Physical Sciences

32h-index2.9kcitations134works3.62yr avg
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Research Topics

GaN-based semiconductor devices and materials(113), Semiconductor materials and devices(65), Silicon Carbide Semiconductor Technologies(53), Ga2O3 and related materials(53), Advancements in Semiconductor Devices and Circuit Design(25)

Publications134 total

2kV/16A β-Ga <sub>2</sub> O <sub>3</sub> Schottky Barrier Diodes with Surface Killer Defects Reduced by Ar Plasma Treatment
IEEE Electron Device Letters·2026
Monolithically integrated GaN-based complementary logic hysteresis comparator for power integration
Japanese Journal of Applied Physics·2025
Perspectives on GaN/SiC hybrid power transistors: A review on heteroepitaxial growth, processing, and device operation
APL Materials·2025Open Access
Enhancing the Performance and Reliability of Large-Area $\beta$-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes via Two-Step Oxygen Annealing
2025
On the Impacts of Mobility Mismatching-Induced Asymmetric Rising and Falling Edges in GaN-Based CMOS Circuits for Prospective Power Integration
2025
Verification of p-GaN Gate Lifetime Models Through Wide Time-Scale ($\mu \mathrm{s}$-10<sup>7</sup>s) Measurement
2025
On the Rational Extraction of the Channel Mobility of Schottky-Type p-GaN Gate Power HEMTs
2025
The characteristics of line-shaped defects and their impact mechanism on device performance in <i>β</i>-Ga2O3 Schottky barrier diodes
Applied Physics Letters·2025· 5 cited
Study on the Influence of Contact Resistance on the Thermal Field Distribution of T- type Cable Terminals
Lecture notes in electrical engineering·2025
Monolithically Integrated GaN Comparator Based on Complementary Logic
IEEE Transactions on Electron Devices·2024· 10 cited
Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT
arXiv (Cornell University)·2024Open Access
Polarization Enhanced GaN Complementary Logic Circuits with Short Propagation Delay
2024· 7 cited
An All-GaN Semiconducting-Gate HEMT for Inherent Gate-Level High-Voltage Protection and Synchronous Switching with Photoelectrically Enhanced Conductivity
2024· 2 cited
Reconfigurable Neurotransistors Based on Wide-Bandgap Semiconductors for Adaptive Reservoir Computing
2024
Suppressed gate leakage and enlarged gate over-drive window of E-mode <i>p</i>-GaN gate double channel HEMTs
Applied Physics Letters·2024· 4 cited
The Role of Line-Shaped Defects in Premature Breakdown of $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Power Diode and Suppression by Oxygen Annealing
2024· 4 cited
A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor
2024· 9 cited
Improved β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Featuring p-NiO Gradual Junction Termination Extension within Mesa Structure
2024· 6 cited
Vertical Leakage and Back-Gating Characteristics of GaN HEMTs Based on GaN/AlN Epitaxy on Off-Axis Conducting 4H-SiC
2024· 1 cited
Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress
2024· 2 cited
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Frequent Co-authors

Kevin J. Chen(49), Jin Wei(34), Li Zhang(24), Mengyuan Hua(18), Song Yang(15), Wenjie Song(14), Sirui Feng(11), Han Xu(11), Tao Chen(11), Jiabei He(9), Zhaofu Zhang(9), Yat Hon Ng(9), Gaofei Tang(8), Junting Chen(8), Jiacheng Lei(8), Yan Cheng(8), Jiahui Sun(7), Gang Lyu(6), Yuru Wang(6), Chengcai Wang(5)