Jin Wei

Peking University — China

Physics and Astronomy · Physical Sciences

40h-index5.4kcitations244works3.52yr avg
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Research Topics

GaN-based semiconductor devices and materials(158), Silicon Carbide Semiconductor Technologies(113), Semiconductor materials and devices(98), Advancements in Semiconductor Devices and Circuit Design(62), Ga2O3 and related materials(49)

Publications244 total

Dynamic instabilities in GaN power devices: mechanisms, challenges and advancements
Japanese Journal of Applied Physics·2025
GaN-on-Si monolithic bidirectional switch with virtual body to suppress substrate-induced dynamic ON-resistance degradation
Applied Physics Letters·2025· 1 cited
7 kV/16.5 mΩ·cm <sup>2</sup> E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit
Semiconductor Science and Technology·2025
Polarization-enhanced conductivity in enhancement-mode GaN p-FET
Applied Physics Letters·2025
Overcoming Dynamic Instabilities in GaN Power Devices
2025
Demonstration of One Transistor-One Diode (1T1D) p-GaN/AlGaN/GaN Memory Cell
IEEE Electron Device Letters·2025· 1 cited
3-KV GaN Smart Power Integration Platform for High-Power-Density Conversion Systems Using Charge-Balanced Superjunction Technology
2025· 1 cited
Negative Gate Bias Induced $V_{\mathrm{t}\mathrm{h}}$ Instability in SiC MOSFET: Role of Body Diode Conduction
2025
900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
Applied Physics Letters·2025· 2 cited
Process‐Dependent Performance of Recessed‐Gate Enhancement‐Mode GaN p‐FET
physica status solidi (a)·2025· 1 cited
Design and Development of Polarization-Enhanced E-Mode GaN p-FET and Complementary Logic (CL) Circuits
IEEE Transactions on Electron Devices·2025· 1 cited
Deceleration of polar molecules by synchronous stimulated radiation force with low power light
Physics Letters A·2025· 1 cited
Sub-Doppler cooling of magnesium fluoride molecules
Chinese Physics B·2025
Deeply Scaled Gate Field Plate to Suppress Drain-Induced Dynamic Threshold Voltage Instability in Schottky-Type p-GaN Gate HEMT
2025
9-kV p-GaN Gate HEMT with Gate Termination Extension Demonstrated on Sapphire Substrate for Improved Breakdown Voltage
2025· 2 cited
Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic R<sub>ON</sub> Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology
2025
High-Performance Enhancement-Mode GaN p-FET Fabricated With an Etch-Stop Process
IEEE Transactions on Electron Devices·2025· 5 cited
Charge Balance Design of 1200-V E-Mode p-GaN Gate HEMT Toward Enhanced Breakdown Voltage and Dynamic Stability
IEEE Electron Device Letters·2025· 4 cited
Full-Range Investigation of Drain-Dependent Bidirectional Dynamic Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT
IEEE Transactions on Electron Devices·2025· 3 cited
Split-p-GaN Gate HEMT With Suppressed Negative V<sub>th</sub> Shift and Enhanced Robustness Against False Turn-On
IEEE Electron Device Letters·2025· 3 cited
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Frequent Co-authors

Kevin J. Chen(42), Zheyang Zheng(22), Gaofei Tang(15), Mengyuan Hua(15), Zhaofu Zhang(10), Huaping Jiang(10), Song Yang(9), Yuru Wang(9), Jiabei He(8), Li Zhang(7), Meng Zhang(7), Han Xu(6), Jiacheng Lei(6), Wenjie Song(5), Hanxing Wang(5), Ruiliang Xie(5), Baikui Li(5), Jiahui Sun(4), Kailun Zhong(4), Xi Tang(4)