Huaping Jiang

Chongqing University — China

Engineering · Physical Sciences

22h-index1.6kcitations102works2.72yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Silicon Carbide Semiconductor Technologies(76), Advancements in Semiconductor Devices and Circuit Design(42), Semiconductor materials and devices(36), Electromagnetic Compatibility and Noise Suppression(11), Electrostatic Discharge in Electronics(9)

Publications102 total

Mid-term Outcomes of the Ross II Procedure in Infants and Young Children with Irreparable Mitral Disease
European Journal of Cardio-Thoracic Surgery·2025
Dynamic Threshold Voltage Drift of Silicon Carbide MOSFET With Drain Stress
IEEE Transactions on Electron Devices·2025
A Low-Power BJT-Based Temperature Sensor with Wide Range and High Resolution
2025
Simulation Analysis of Press-Pack IGBT Modules with Embedded Phase Change Material
2025
Influence of Mismatched Gate Loop Inductance on Threshold Dispersity Evolution and Current Sharing of Parallel SiC MOSFETs
IEEE Transactions on Power Electronics·2025· 2 cited
Short-term Recovery of Silicon Carbide Power MOSFET Threshold Voltage
2024
Gate Drive Method for Reducing Threshold Voltage Drift of Silicon Carbide MOSFET
IEEE Journal of Emerging and Selected Topics in Power Electronics·2024
Characteristics of the Discharge Channels in Dielectric Barrier Discharge with Rotating High-Voltage Electrodes
2024
Reliability evaluation of IGBT power module on electric vehicle using big data
Journal of Semiconductors·2024· 3 cited
Recovery Performance of the Dynamic Threshold Voltage Drift of Silicon Carbide MOSFETs
IEEE Transactions on Power Electronics·2024· 8 cited
Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETs
IEEE Transactions on Power Electronics·2024· 16 cited
Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift
IEEE Transactions on Electron Devices·2024· 3 cited
Research on Self-Heating Multi-Pulse Test Method of MMC Power Sub-module
2023
Gate drive method for reducing threshold voltage drift of silicon carbide MOSFET
2023Open Access
Avalanche capability degradation of the parallel-connected SiC MOSFETs
Microelectronics Reliability·2023· 4 cited
Multiple Phase Change Materials Integrated Into Power Module for Normal and High Current Reliability Enhancement
IEEE Transactions on Device and Materials Reliability·2023· 4 cited
BP neural network for non-invasive IGBT junction temperature online detection
Microelectronics Reliability·2022· 29 citedOpen Access
Electrical and Thermal Performances of IGCT in High Voltage DC Circuit Breaker
2022· 1 cited
A comparative study of SiC MOSFETs with and without integrated SBD
Microelectronics Journal·2022· 13 cited
Investigation Into the Third Quadrant Characteristics of Silicon Carbide MOSFET
IEEE Transactions on Power Electronics·2022· 22 cited
page 1 of 6Next →

Frequent Co-authors

Li Ran(25), Jin Wei(15), Kevin J. Chen(11), Xiaohan Zhong(11), Lei Tang(11), Meng Zhang(10), Philip Mawby(10), Guanqun Qiu(9), Xiaowei Qi(8), Hua Mao(8), Weihua Shao(8), Bo Zhang(6), Zhaoji Li(5), Hai Ren(5), Xiaofeng Jiang(4), Wanjun Chen(4), Ching‐Hsiang Cheng(3), Zugang Rao(3), Xiaoping Dai(3), Maolong Ke(3)