Jiacheng Lei

Hong Kong University of Science and Technology — Hong Kong

Physics and Astronomy · Physical Sciences

15h-index788citations26works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(23), Semiconductor materials and devices(15), Silicon Carbide Semiconductor Technologies(14), Ga2O3 and related materials(8), Advancements in Semiconductor Devices and Circuit Design(4)

Publications26 total

A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic
2020· 2 cited
High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and <i>In Situ</i> Si₃N₄-Cap Passivation
IEEE Transactions on Electron Devices·2020· 15 cited
GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage
IEEE Electron Device Letters·2020· 34 cited
Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices
IEEE Transactions on Industrial Electronics·2019· 36 cited
A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor
Applied Physics Express·2019· 11 cited
Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs
IEEE Transactions on Electron Devices·2019· 23 cited
2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current
npj 2D Materials and Applications·2019· 48 citedOpen Access
Characterization of Dynamic $I_{\text{OFF}}$ in Schottky-Type $p$-GaN Gate HEMTs
2019· 1 cited
Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode
2019· 3 cited
Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications
2019
Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode
IEEE Transactions on Electron Devices·2019· 14 cited
Multifunctional GaN-on-Si power devices based on double-channel heterostructure
2019
Investigation of Dynamic I OFF Under Switching Operation in Schottky-Type p-GaN Gate HEMTs
IEEE Transactions on Electron Devices·2019
Dynamic OFF-State Current (Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in ${p}$ -GaN Gate HEMTs With an Ohmic Gate Contact
IEEE Electron Device Letters·2018· 37 cited
Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance
IEEE Electron Device Letters·2018· 39 cited
High-speed, high-reliability GaN power device with integrated gate driver
2018· 78 cited
Reverse-blocking AlGaN/GaN normally-off MIS-HEMT with double-recessed gated Schottky drain
2018· 12 cited
650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
IEEE Electron Device Letters·2017· 82 cited
An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss
2017· 33 cited
Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiN&lt;inf&gt;x&lt;/inf&gt;/GaN MIS-FETs
2017· 24 cited
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Frequent Co-authors

Kevin J. Chen(25), Jin Wei(18), Mengyuan Hua(15), Gaofei Tang(13), Zhaofu Zhang(12), Zheyang Zheng(12), Qingkai Qian(10), Yuru Wang(7), Song Yang(4), Jiabei He(3), Wenjie Song(3), Risheng Su(2), F.-W. Yao(2), Yih‐Jyh Lin(2), Jialong Yu(2), Tom Tsai(2), H.C. Tuan(2), Alexander Kalnitsky(2), Gang Lyu(2), Qilong Bao(2)