N. Dyakonova

Centre National de la Recherche Scientifique — France

Physics and Astronomy · Physical Sciences

12h-index893citations78works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(43), Terahertz technology and applications(27), Advanced Semiconductor Detectors and Materials(17), Semiconductor materials and devices(13), Photonic and Optical Devices(12)

Publications78 total

Low Frequency Noise and Resistance in Non-Passivated InAsSbP/InAs based Photodiodes in the Presence of Atmosphere with Ethanol Vapor
Technical Physics Letters·2023
Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes and LEDs
2023
Низкочастотные шумы и сопротивление фотодиодов с незащищенной поверхностью на основе InAsSbP/InAs в атмосфере паров этанола
Письма в журнал технической физики·2023Open Access
Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes
Infrared Physics & Technology·2022· 2 citedOpen Access
Highly sensitive photodetectors at 0.6 THz based on quantum dot single electron transistors
2021· 1 cited
Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs
Infrared Physics & Technology·2021· 11 citedOpen Access
Gated two-dimensional electron gas in magnetic field: Nonlinear versus linear regime
Physical review. B./Physical review. B·2020· 3 citedOpen Access
Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias
Infrared Physics & Technology·2020· 4 citedOpen Access
Low frequency noise in reverse biased double heterostructure P-<i>InAsSbP</i>/n-<i>InAs</i> infrared photodiodes
Semiconductor Science and Technology·2020· 3 citedOpen Access
Room temperature low frequency noise in n <sup>+</sup> -InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes
Semiconductor Science and Technology·2019· 5 cited
Terahertz Study of Wood Structure as Impacted by Grapevine Trunk Diseases
2019· 2 citedOpen Access
Responsivity enhancement of double heterojunction bipolar transistors for wireless terahertz communication
HAL (Le Centre pour la Communication Scientifique Directe)·2019
Low frequency noise in reverse biased P- <i>InAsSbP</i> /n- <i>InAs</i> infrared photodiodes
Semiconductor Science and Technology·2018· 7 cited
Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes at 300K and 77K
HAL (Le Centre pour la Communication Scientifique Directe)·2018
Low frequency noise in p-InAsSbP/n-InAs photodiodes
HAL (Le Centre pour la Communication Scientifique Directe)·2018
Millimetre band detectors based on GaN/AlGaN HEMT
2018 22nd International Microwave and Radar Conference (MIKON)·2018· 3 cited
Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes
Semiconductor Science and Technology·2018· 11 citedOpen Access
Reducing noise equivalent power in InP DHBT terahertz detector by biasing the collector
2017· 2 cited
High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors
2017· 3 cited
Hot carriers and THz cyclotron emission from Dirac-like fermions in bulk HgCdTe alloys
HAL (Le Centre pour la Communication Scientifique Directe)·2017
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Frequent Co-authors

W. Knap(29), M. E. Levinshteĭn(18), F. Teppe(16), S. L. Rumyantsev(10), A. El Fatimy(7), D. Coquillat(7), M. S. Shur(7), Y. M. Meziani(7), J. Łusakowski(7), S. A. Karandashev(7), B. A. Matveev(7), M. A. Remennyĭ(7), T. Skotnicki(6), C. Conséjo(5), G. Ghibaudo(5), F. Bœuf(5), Christophe Gaquière(4), John W. Palmour(4), Ranbir Singh(4), R. Tauk(4)