M. E. Levinshteĭn

Ioffe Institute — Russia

Engineering · Physical Sciences

32h-index6.0kcitations308works0.32yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(161), Semiconductor materials and devices(72), Semiconductor materials and interfaces(62), Advancements in Semiconductor Devices and Circuit Design(56), GaN-based semiconductor devices and materials(52)

Publications308 total

Effect of Electron Irradiation on the Parameters of Gallium Nitride in a Wide Temperature Range
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2025
Dependence of the silicon carbide radiation resistance on the irradiation temperature
Поверхность Рентгеновские синхротронные и нейтронные исследования·2024Open Access
Effect of Radiation-Induced Defects in Gallium and Nitrogen Lattices on n-GaN Conductivity Compensation
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2024
Dependence of Silicon Carbide Radiation Resistance on the Irradiation Temperature
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2024
Local Diagnostics of Spin Defects in Irradiated SiC Schottky Diodes
Journal of Experimental and Theoretical Physics Letters·2024
Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes
Semiconductors·2024· 2 cited
Persistent Relaxation Processes in Proton-Irradiated 4H-SiC
Semiconductors·2024
Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga<sub>2</sub>O<sub>3</sub>, GaN) under Proton Irradiation
Поверхность Рентгеновские синхротронные и нейтронные исследования·2023
Low Frequency Noise and Resistance in Non-Passivated InAsSbP/InAs based Photodiodes in the Presence of Atmosphere with Ethanol Vapor
Technical Physics Letters·2023
Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2023· 2 cited
Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes and LEDs
2023
Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range
Semiconductors·2023
Effect of the Electron-Irradiation Temperature on the Formation of Radiation Defects in Silicon Carbide
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2023· 2 cited
Effect of Proton Irradiation on the Properties of High-Voltage Integrated 4H-SiC Schottky Diodes at Operating Temperatures
Semiconductors·2023
Effect of proton irradiation on the properties of high-voltage integrated 4H-SiC Schottky diodes at operating temperatures
Физика и техника полупроводников·2023· 1 citedOpen Access
Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes
Infrared Physics & Technology·2022· 2 citedOpen Access
Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures
Solid-State Electronics·2022· 1 cited
Role of Temperature in the Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Charged Particles
Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2022
Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature
Semiconductors·2022· 2 cited
LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS
WORLD SCIENTIFIC eBooks·2022
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Frequent Co-authors

S. L. Rumyantsev(30), M. S. Shur(23), John W. Palmour(17), R. Gaška(11), G. Simin(10), P. A. Ivanov(9), T. T. Mnatsakanov(8), Sergey Rumyantsev(7), S. N. Yurkov(7), X. Hu(7), Ranbir Singh(7), Anant Agarwal(7), M. Asif Khan(6), Nezih Pala(6), Jinwei Yang(4), W. Knap(4), А. П. Дмитриев(4), Pavel A. Ivanov(4), L. I. Pomortseva(3), Jae‐Hun Yang(3)