L. I. Pomortseva

All-Russian Electrotechnical Institute named after V.I.Lenin — Russia

Engineering · Physical Sciences

8h-index456citations15works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(8), Semiconductor materials and interfaces(6), Advancements in Semiconductor Devices and Circuit Design(5), Thin-Film Transistor Technologies(5), Silicon Nanostructures and Photoluminescence(5)

Publications15 total

Minority-charge-carrier mobility at low injection level in semiconductors
Semiconductors·2011· 3 cited
Fundamental physical limitations on the blocking voltage of SiC rectifier diodes
Semiconductor Science and Technology·2009· 3 cited
Universal analytical approximation of the carrier mobility in semiconductors for a wide range of temperatures and doping densities
Semiconductors·2004· 36 cited
Carrier mobility model for GaN
Solid-State Electronics·2003· 258 cited
Carrier mobility model for simulation of SiC-based electronic devices
Semiconductor Science and Technology·2002· 65 cited
Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level
Semiconductors·2001· 46 cited
Effect of nonlinear physical phenomena on the photovoltaic effect in silicon p+–n–n+ solar cells
Solid-State Electronics·2000· 8 cited
Investigation of the optical, temperature dependent free-carrier absorption of a bipolar electron-hole plasma in silicon
Solid-State Electronics·1999· 8 cited
Choosing proper approximation for semiconductor device analytical modeling at low temperature
Journal de Physique IV (Proceedings)·1998
Investigation into the effect of Auger recombination on charge carrier transport and static characteristics of silicon multilayer structures
Solid-State Electronics·1997· 11 cited
Electron-hole scattering in p-type silicon with a low charge-carrier injection level
Semiconductors·1997· 3 cited
Study on Feasibility of Minority Carrier Complete Drag in Silicon. New Investigation Method Intended for Indirect-Gap Semiconductors
Journal de Physique IV (Proceedings)·1996Open Access
Parameters that characterize electron-hole scattering in semiconductors when the injection level is low
Semic·1995
Investigation of the effect of electron-hole scattering on charge carrier transport in semiconductors and semiconductor devices under low injection conditions
Solid-State Electronics·1995· 15 cited
Estimate of the effective narrowing of the band gap in heavily doped layers of silicon structures
Semic·1994

Frequent Co-authors

T. T. Mnatsakanov(14), V. B. Shuman(5), M. E. Levinshteĭn(4), S. N. Yurkov(4), Dierk Schröder(3), A. Schlögl(3), G. Simin(1), M. Asif Khan(1), B.N. Gresserov(1), John W. Palmour(1), E. G. Guk(1), D. G. Yakovlev(1)