M. Steen

Engineering · Physical Sciences

19h-index1.7kcitations33works0.02yr avg
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Research Topics

Semiconductor materials and devices(19), Advancements in Semiconductor Devices and Circuit Design(16), Ferroelectric and Negative Capacitance Devices(7), Membrane Separation Technologies(4), Metal and Thin Film Mechanics(4)

Publications33 total

In The Sky
2017
Silicon‐Based Packaging and Silicon Micromachining
2009
横方向酸素化プロセスを用いたHfO 2 /TiN/ポリSiゲートスタックによるpFET V t 制御
Symposium on VLSI Technology·2009
Watson Women's Network Leadership: A Best Practice at IBM Research for Innovative and Effective Recruitment and Retention
Women in Engineering ProActive Network·2008
Enhanced Professional Networking and its Impact on Personal Development and Business Success
2008· 1 cited
High-Performance High-¿/Metal Gates for 45nm CMOS and Beyond with Gate-First Processing
2007· 75 cited
Poly-Si/AlN/HfSiO Stack for Ideal Threshold Voltage and Mobility in Sub-100 nm MOSFETs
2006· 17 cited
Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO/sub 2//metal stacks
IEEE Electron Device Letters·2006· 46 cited
pFET V t control with HfO 2 /TiN/poly-Si gate stack using a lateral oxygenation process
2006· 3 cited
Investigation of Gas Phase Species and Deposition of SiO<sub>2</sub> Films from HMDSO/O<sub>2</sub> Plasmas
Plasma Processes and Polymers·2006· 103 cited
Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond
2006· 65 cited
Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
2005· 8 cited
Role of oxygen vacancies in V/sub BF//V/sub t/ stability of pFET metals on HfO/sub 2/
2005· 65 cited
Charge trapping in aggressively scaled metal gate/high-κ stacks
2005· 12 cited
Advanced gate stacks with fully silicided (FUSI) gates and high-k dielectrics. enhanced performance at reduced gate leakage
2005· 28 cited
Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2005· 87 cited
High performance FDSOI CMOS technology with metal gate and high-k
2005· 21 cited
CVD Rhenium and PVD Tantalum Gate MOSFETs Fabricated With a Replacement Technique
IEEE Electron Device Letters·2004· 4 cited
Surface modification with nitrogen-containing plasmas to produce hydrophilic, low-fouling membranes
Journal of Membrane Science·2004· 245 cited
Issues in NiSi-gated FDSOI device integration
2004· 34 cited
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Frequent Co-authors

Vijay Narayanan(13), B.P. Linder(10), Vamsi Paruchuri(10), Ellen R. Fisher(9), E. Cartier(9), P. Jamison(9), R. Jammy(8), J. Newbury(8), R. Carruthers(7), M. Ieong(7), Sufi Zafar(7), M. Copel(7), Martin M. Frank(7), Supratik Guha(6), Agnese Callegari(6), D. Boyd(5), B. Doris(5), N. A. Bojarczuk(5), E. P. Gusev(5), P. Kozlowski(5)