Yung‐Fang Tan

National Sun Yat-sen University — Taiwan

Engineering · Physical Sciences

11h-index342citations47works2.52yr avg
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Research Topics

Advanced Memory and Neural Computing(30), Ferroelectric and Negative Capacitance Devices(28), Semiconductor materials and devices(27), Advancements in Semiconductor Devices and Circuit Design(8), Transition Metal Oxide Nanomaterials(5)

Publications47 total

Investigating unsaturated output characteristics and potential applications of amorphous InGaZnO thin-film transistors with drain-connected field plate
Microelectronic Engineering·2025· 1 cited
Investigation and modeling mechanism on capacitance characteristic with electrical measurement to ferroelectric random access memory
Physica Scripta·2025
Investigation of the Reliability of Different High-Resistance States in 1T1R Devices
2024· 2 cited
Impact of deposition temperature on electrical properties of HZO-based FeRAM
Journal of Applied Physics·2024· 7 citedOpen Access
Phase transformation on HZO ferroelectric layer in ferroelectric random-access memory induced by x-ray irradiation
Semiconductor Science and Technology·2023· 2 citedOpen Access
Utilizing high pressure hydrogen annealing to realize forming free CBRAM
Materials Science and Engineering B·2023· 1 cited
Degradation mechanism differences between TiN- and TaN-electrode HZO-based FeRAMs analyzed by current mechanism fitting
Semiconductor Science and Technology·2023· 8 citedOpen Access
Analysis of Critical Schottky Distance Effect and Distributed Set Voltage in HfO2-based 1T-1R Device
2023
Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress
IEEE Electron Device Letters·2023· 8 cited
Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors
Advanced Electronic Materials·2023· 11 citedOpen Access
Forming-Free HfO<sub>2</sub>-Based Resistive Random Access Memory by X-Ray Irradiation
IEEE Transactions on Electron Devices·2022· 3 cited
Meridian study on the response current affected by acupuncture needling direction
Medicine·2022· 6 citedOpen Access
Analysis of Meridian Flow Direction by Electrical Stimulation Method
Nanoscale Research Letters·2022· 4 citedOpen Access
Thermal Field Effect in Resistive Random Access Memory With Sidewall Structures of Different Thermal Conductivity
IEEE Transactions on Electron Devices·2022· 2 cited
Use of a supercritical fluid treatment to improve switching region in resistive random access memory
Applied Physics Express·2022· 2 cited
A Method to Measure Polarization Signal of Nanoscale One-Transistor-One-Capacitor Ferroelectric Memory
IEEE Electron Device Letters·2022· 2 cited
Abnormal On-Current Degradation Under Non-Conductive Stress in Contact Field Plate Lateral Double-Diffused Metal-Oxide- Semiconductor Transistor With 0.13-μm Bipolar-CMOS-DMOS Technology
IEEE Electron Device Letters·2022· 8 cited
Investigations on TaHf alloys for thin film resistor applications
Materials Chemistry and Physics·2022· 2 cited
A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)
IEEE Transactions on Electron Devices·2022· 8 cited
Effects of X-ray accelerating voltage on electrical properties and reliability for ferroelectric random-access memory (FeRAM)
Applied Physics Express·2022· 1 cited
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Frequent Co-authors

Ting‐Chang Chang(40), Wen‐Chung Chen(21), Tsung‐Ming Tsai(20), Yong‐Ci Zhang(18), Chung‐Wei Wu(17), Yu‐Hsuan Yeh(17), Shih‐Kai Lin(16), Peiyu Wu(15), Po‐Hsun Chen(14), Simon M. Sze(13), Wei‐Chen Huang(13), Haimei Zheng(11), Chun-Chu Lin(10), Li-Chuan Sun(10), Simon M. Sze(10), Chih-Cheng Yang(9), Yi‐Ting Tseng(9), Sheng‐Yao Chou(8), Min-Chen Chen(8), Cheng-Hsien Wu(7)