Steven Wolf

University of California, San Diego — United States

Engineering · Physical Sciences

12h-index367citations28works0.02yr avg
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Research Topics

Semiconductor materials and devices(18), Semiconductor Quantum Structures and Devices(4), Graphene research and applications(4), 2D Materials and Applications(4), Advancements in Semiconductor Devices and Circuit Design(4)

Publications28 total

Density functional theory study on reaction mechanisms of Co(tbu2DAD)2 for area selective-atomic layer deposition of Co films on metal surfaces
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2023· 4 cited
Proximity Effects of the Selective Atomic Layer Deposition of Cobalt on the Nanoscale: Implications for Interconnects
ACS Applied Nano Materials·2021· 20 cited
Promixity Effect of Selective Co ALD on the Nanoscale
2020
Proximity Effect Of Selective Co ALD on the Nanoscale
2020
Contact Engineering of Layered MoS<sub>2</sub> via Chemically Dipping Treatments
Advanced Functional Materials·2020· 26 cited
Electronic passivation of PbSe quantum dot solids by trimethylaluminum vapor dosing
Applied Surface Science·2020· 15 citedOpen Access
The role of oxide formation on insulating versus metallic substrates during Co and Ru selective ALD
Applied Surface Science·2019· 12 cited
Band Structure Engineering of Layered WSe<sub>2</sub> <i>via</i> One-Step Chemical Functionalization
ACS Nano·2019· 29 cited
Hyper-Selective Co Metal ALD on Metals vs. SiO<sub>2</sub> without Passivation
2019· 2 cited
Al2O3/Si0.7Ge0.3(001) &amp; HfO2/Si0.7Ge0.3(001) interface trap state reduction via in-situ N2/H2 RF downstream plasma passivation
Applied Surface Science·2019· 12 cited
Barrier Layers and Metal Fill for Back End of Line Processing
eScholarship (California Digital Library)·2019Open Access
Low temperature thermal ALD TaNx and TiNx films from anhydrous N2H4
Applied Surface Science·2018· 13 cited
(Invited) Low Temperature Thermal ALD TiN<sub>x</sub> and TaN<sub>x</sub> Films from Anhydrous N<sub>2</sub>H<sub>4</sub>
ECS Meeting Abstracts·2018
Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering
2018· 1 cited
Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3
Applied Surface Science·2018· 16 cited
Selective Chemical Response of Transition Metal Dichalcogenides and Metal Dichalcogenides in Ambient Conditions
ACS Applied Materials & Interfaces·2017· 25 cited
Selective Etching of Silicon in Preference to Germanium and Si<sub>0.5</sub>Ge<sub>0.5</sub>
ACS Applied Materials & Interfaces·2017· 17 cited
Self-limiting CVD of a passivating SiO x control layer on InGaAs(001)-(2x4) with the prevention of III-V oxidation
Surface Science·2017
Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x(001) and SixGe1− x(110)
The Journal of Chemical Physics·2017· 19 cited
Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2016Open Access
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Frequent Co-authors

Andrew C. Kummel(24), Jun Hong Park(10), Mary Edmonds(10), Michael Breeden(7), Iljo Kwak(6), Kasra Sardashti(6), Russell J. Holmes(6), Daniel Alvarez(6), Suresh Vishwanath(4), Huili Grace Xing(4), Naomi Yoshida(4), Scott T. Ueda(4), Ravi Droopad(4), Amritesh Rai(3), J. K. Furdyna(3), Kyeongjae Cho(3), Sanjay K. Banerjee(3), Ashay Anurag(3), Mansour Moinpour(3), Jacob Woodruff(3)