H. J. von Bardeleben

Sorbonne Université — France

Engineering · Physical Sciences

44h-index7.0kcitations332works2.22yr avg
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Research Topics

Semiconductor materials and devices(126), Semiconductor materials and interfaces(56), ZnO doping and properties(55), Silicon Nanostructures and Photoluminescence(46), Silicon Carbide Semiconductor Technologies(40)

Publications332 total

Publisher's note: “High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes” [J. Appl. Phys. 137, 055703 (2025)]
Journal of Applied Physics·2025Open Access
High-temperature annealing induced electrical compensation in UID and Sn doped <i>β</i>-Ga2O3 bulk samples: The role of VGa–Sn complexes
Journal of Applied Physics·2025· 3 citedOpen Access
High‐Frequency Electron Paramagnetic Resonance and Electron‐Nuclear Double Resonance Spectroscopy Study of the Ga Vacancy in β‐Ga<sub>2</sub>O<sub>3</sub>
physica status solidi (b)·2024· 2 citedOpen Access
Magnetic properties of polycrystalline bulk crystals of MnGeP2
Journal of Applied Physics·2024· 1 citedOpen Access
Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)
Molecules·2024· 4 citedOpen Access
Nitrogen-Related High-Spin Vacancy Defects in Bulk (SiC) and 2D (hBN) Crystals: Comparative Magnetic Resonance (EPR and ENDOR) Study
Quantum Reports·2024· 4 citedOpen Access
Room temperature coherence properties and 14N nuclear spin readout of <i>NV</i> centers in 4H–SiC
Applied Physics Letters·2024· 5 cited
Photoinduced EPR and ENDOR studies of the divacancies and nitrogen-vacancy defects in silicon carbide
Magnetic resonance in solids·2024Open Access
Aluminum intercalation behaviours of {[Fe(Tp)(CN)<sub>3</sub>]<sub>2</sub>[M(H<sub>2</sub>O)<sub>2</sub>]} cyanido-bridged chain compounds in an ionic liquid electrolyte
Dalton Transactions·2024· 1 citedOpen Access
High temperature annealing of n-type bulk β-Ga2O3: Electrical compensation and defect analysis—The role of gallium vacancies
Journal of Applied Physics·2023· 6 cited
14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
Journal of Applied Physics·2023· 10 citedOpen Access
NV-centers in SiC: A solution for quantum computing technology?
Frontiers in Quantum Science and Technology·2023· 19 citedOpen Access
CCDC 2157685: Experimental Crystal Structure Determination
The Cambridge Structural Database·2022Open Access
CCDC 2157683: Experimental Crystal Structure Determination
The Cambridge Structural Database·2022Open Access
CCDC 2157684: Experimental Crystal Structure Determination
The Cambridge Structural Database·2022Open Access
Enlightening the Alkali Ion Role in the Photomagnetic Effect of FeCo Prussian Blue Analogues
Journal of the American Chemical Society·2022· 34 citedOpen Access
Photo-Activated Phosphorescence of Ultrafine ZnS:Mn Quantum Dots: On the Lattice Strain Contribution
The Journal of Physical Chemistry C·2021· 6 citedOpen Access
Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers
Materials Science in Semiconductor Processing·2021· 24 cited
Spin Polarization, Electron–Phonon Coupling, and Zero-Phonon Line of the NV Center in 3<i>C</i>-SiC
Nano Letters·2021· 22 citedOpen Access
Hyperfine and nuclear quadrupole splitting of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msup><mml:mrow><mml:mi>NV</mml:mi></mml:mrow><mml:mo>−</mml:mo></mml:msup></mml:math> ground state in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math>-SiC
Physical review. B./Physical review. B·2021· 20 cited
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Frequent Co-authors

J. L. Cantin(15), J. C. Bourgoin(8), D. Stiévenard(7), U. Gerstmann(5), E. Rauls(4), L. Thevenard(3), Ludovic Largeau(3), A. Lemaı̂tre(3), L. El Mir(3), Z. Ben Ayadi(3), K. Djessas(3), Kh. Khazen(3), A. M. Huber(2), Jianqun Yang(2), Xingji Li(2), Weibo Gao(2), N. Jedrecy(2), C. Gourdon(2), Jean-Yves Duquesne(2), András Csо́rе́(2)