Kh. Khazen

Sorbonne Université — France

Materials Science · Physical Sciences

10h-index402citations20works0.02yr avg
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Research Topics

ZnO doping and properties(15), Magnetic properties of thin films(14), Magnetic and transport properties of perovskites and related materials(10), Magnetic Properties and Applications(3), Semiconductor Quantum Structures and Devices(1)

Publications20 total

High-resolution resonant excitation of NV centers in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi>SiC</mml:mi></mml:mrow></mml:math>: A matrix for quantum technology applications
Physical review. B./Physical review. B·2019· 32 citedOpen Access
Quantitative determination of the Mn site distribution in ultrathin<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mo>Ga</mml:mo><mml:mrow><mml:mn>0.80</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Mn</mml:mi><mml:mrow><mml:mn>0.20</mml:mn></mml:mrow></mml:msub></mml:math>As layers with high critical temperatures: A Rutherford backscattering channeling investigation
Physical Review B·2014· 7 cited
Détermination par RBS-C quantitative de la répartition du MN en sites interstitiels et substitutionnel en GaxMn1-xAs ultra-mince avec température critique élevée.
HAL (Le Centre pour la Communication Scientifique Directe)·2014
Uniaxial anisotropy of two-magnon scattering in an ultrathin epitaxial Fe layer on GaAs
Applied Physics Letters·2013· 45 citedOpen Access
RBS Channeling Investigation of ultrathin GaMnAs Layers with very high critical Temperatures.
HAL (Le Centre pour la Communication Scientifique Directe)·2013
Intrinsically limited critical temperatures of highly doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Mn</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:mtext>As</mml:mtext></mml:mrow></mml:math>thin films
Physical Review B·2010· 20 cited
Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloys
Physical Review B·2010· 69 cited
Unusual domain-wall motion in ferromagnetic semiconductor films with tetragonal anisotropy
Physical Review B·2009· 3 cited
Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers
arXiv (Cornell University)·2009Open Access
Ferromagnetic resonance study of MnAs∕(Ga,Mn)As bilayers
Journal of Applied Physics·2009· 8 citedOpen Access
Anisotropic magnetization relaxation in ferromagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Mn</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:mtext>As</mml:mtext></mml:mrow></mml:math>thin films
Physical Review B·2008· 28 cited
Damping and magnetic anisotropy of ferromagnetic GaMnAs thin films
arXiv (Cornell University)·2008Open Access
Ferromagnetic resonance of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mn>0.93</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Mn</mml:mi><mml:mn>0.07</mml:mn></mml:msub><mml:mi mathvariant="normal">As</mml:mi></mml:mrow></mml:math>thin films with constant Mn and variable free-hole concentrations
Physical Review B·2008· 35 cited
Determination of the micromagnetic parameters in (Ga,Mn)As using domain theory
Physical Review B·2007· 32 citedOpen Access
Experimental determination of domain wall width and spin stiffness constant in ferromagnetic (Ga,Mn)As with perpendicular easy axis
Physica E Low-dimensional Systems and Nanostructures·2007· 2 cited
Domain structure and magnetic anisotropy fluctuations in (Ga,Mn)As: Effect of annealing
Journal of Applied Physics·2007· 25 citedOpen Access
Dependence of Magnetic Anisotropies and Critical Temperatures on the Hole Concentration in Ferromagnetic GaMnAs Thin Films
IEEE Transactions on Magnetics·2007· 1 cited
Expansion and Collapse of Domains With Reverse Magnetization in (Ga,Mn)As Epilayers With Perpendicular Magnetic Easy Axis
IEEE Transactions on Magnetics·2007· 3 cited
Evolution of the magnetic anisotropy with carrier density in hydrogenated<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Mn</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">As</mml:mi></mml:mrow></mml:math>
Physical Review B·2007· 44 citedOpen Access
Ferromagnetic resonance study of GdN thin films with bulk and extended lattice constants
Physical Review B·2006· 48 cited

Frequent Co-authors

H. J. von Bardeleben(17), J. L. Cantin(11), A. Lemaı̂tre(10), L. Thevenard(9), O. Mauguin(6), M. Cubukcu(5), C. Gourdon(5), A. Dourlat(5), V. Jeudy(5), Ludovic Largeau(4), K. Olejník(3), I. Vickridge(3), V. Novák(2), M. Cukr(2), C. Testelin(2), L. Largeau(2), D. Benzeggouta(2), A. Lema�tre(2), A. Bittar(1), Simon Granville(1)