András Csо́rе́

Budapest University of Technology and Economics — Hungary

Engineering · Physical Sciences

8h-index380citations19works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(10), Diamond and Carbon-based Materials Research(9), Semiconductor materials and devices(8), Graphene research and applications(3), ZnO doping and properties(3)

Publications19 total

Fluorescence spectrum and charge state control of divacancy qubits via illumination at elevated temperatures in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> silicon carbide
Physical review. B./Physical review. B·2022· 18 cited
Photoluminescence spectrum of divacancy in porous and nanocrystalline cubic silicon carbide
Journal of Applied Physics·2022· 23 citedOpen Access
Point Defects in Silicon Carbide for Quantum Technology
2021· 4 cited
Towards identification of silicon vacancy-related electron paramagnetic resonance centers in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math>-SiC
Physical review. B./Physical review. B·2021· 14 citedOpen Access
Photoluminescence lineshapes and charge state control of divacancy qubits in silicon carbide
arXiv (Cornell University)·2021· 1 citedOpen Access
<i>Ab initio</i> determination of pseudospin for paramagnetic defects in SiC
Physical review. B./Physical review. B·2020· 15 citedOpen Access
First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC
Materials science forum·2019· 2 cited
Silicon vacancy related defects in 4H SiC for quantum technology
ICSCRM2019 Organizing Committee·2019
First principles calculation of highly anisotropic g -tensors of Kramers-doublet transition metals in hexagonal SiC
ICSCRM2019 Organizing Committee·2019
Excitation properties of the divacancy in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math>-SiC
Physical review. B./Physical review. B·2018· 68 citedOpen Access
Characterization and formation of NV centers in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>3</mml:mn><mml:mi>C</mml:mi></mml:mrow><mml:mo>,</mml:mo><mml:mo> </mml:mo><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math>, and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> SiC: An <i>ab initio</i> study
Physical review. B./Physical review. B·2017· 76 citedOpen Access
Characterization and formation of NV centers in 3C, 4H and 6H SiC: an study
arXiv (Cornell University)·2017Open Access
Density Functional Theory on NV Center in 4H SiC
Materials science forum·2017· 2 cited
Materials Science, Testing and Informatics VIII
Trans Tech Publications Ltd. eBooks·2017Open Access
Determination of Dislocation Density in Lath Martensite by Means of Electron Backscatter Diffraction
Materials science forum·2017· 2 cited
NV centers in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>3</mml:mn><mml:mi>C</mml:mi><mml:mo>,</mml:mo><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math>silicon carbide: A variable platform for solid-state qubits and nanosensors
Physical review. B./Physical review. B·2016· 109 cited
Investigation of Mo Defects in 4H-SiC by Means of Density Functional Theory
Materials science forum·2016· 6 cited
Determination of dislocation density by electron backscatter diffraction and X-ray line profile analysis in ferrous lath martensite
Materials Characterization·2015· 40 cited
Determination of Dislocation Density in Cubic Systems
Materials science forum·2015

Frequent Co-authors

Ádám Gali(13), Nguyên Tiên Són(5), Ivan G. Ivanov(4), Péter Jánoš Szabó(4), H. J. von Bardeleben(3), J. L. Cantin(3), Andreas Gällström(3), Björn Magnusson(2), Takeshi Ohshima(2), Tibor Berecz(2), E. Rauls(1), U. Gerstmann(1), Péter Jenei(1), János L. Lábár(1), Jenõ Gubicza(1), Nain Mukesh(1), Gyula Károlyházy(1), Dávid Beke(1), Erik Janzén(1), Kornél Májlinger(1)