J.C. Irvin

AT&T (United States) — United States

Physics and Astronomy · Physical Sciences

13h-index1.9kcitations38works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(14), Radio Frequency Integrated Circuit Design(14), Advancements in Semiconductor Devices and Circuit Design(12), Semiconductor materials and devices(10), Semiconductor Lasers and Optical Devices(6)

Publications38 total

A 6 Watt 6 GHz GaAsFET Power Module with GaAs Matching Circuits
2005· 1 cited
A microwave GaAs FET power module with GaAs matching circuits - The M-FET (matched field effect transistor)
Microwave journal·1985· 2 cited
A 6 WATT 6 GHz GaAsFET POWER MODULE WITH GaAs MATCHING
1984
Reliability of power GaAs field-effect transistors
IEEE Transactions on Electron Devices·1982· 31 cited
Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions
IEEE Transactions on Electron Devices·1981· 64 cited
A Large Scale Reliability Study of Burnout Failure in GaAs Power FETs
Reliability physics·1980· 7 cited
Reliability of Improved Power GaAs Field-Effect Transistors
Reliability physics·1980· 7 cited
Reliability of power GaAs field-effect transistors
1979· 1 cited
Failure Mechanisms and Reliability of Low-Noise GaAs FETs
Bell System Technical Journal·1978· 33 cited
Failure Mechanisms and Reliability of Low-Noise GaAs FETs
1978· 4 cited
Study and Fabrication of a Frequency Divider-Multiplier Scheme for High-Efficiency Microwave Power
IRE Transactions on Communications Systems·1976· 20 cited
10-W and 12-W GaAs IMPATT's
IEEE Transactions on Electron Devices·1975· 16 cited
High Efficiency Impatt Diodes
Applied solid state science·1975· 7 cited
I-2 Theoretical and experimental study of GaAs modified Read IMPATT's
IEEE Transactions on Electron Devices·1974
New Frontiers of Varactor Harmonic Power Generation in the C-Band
Bell System Technical Journal·1974· 1 cited
ChemInform Abstract: SCANNING ELECTRON MICROSCOPE STUDY OF PREMATURE BREAKDOWN SITES IN GAAS IMPATT TESTERS
Chemischer Informationsdienst·1974
Scanning Electron Microscope Studies of Premature Breakdown Sites in GaAs IMPATT Testers
Journal of The Electrochemical Society·1974· 7 citedOpen Access
Experimental study of dependence of performance on profile parameters in quasi-Read GaAs IMPATT diodes
IEEE Transactions on Electron Devices·1973· 4 cited
Fabrication and noise performance of high-power GaAs IMPATTS
Proceedings of the IEEE·1971· 32 cited
GaAs Schottky diodes with near-ideal characteristics
Proceedings of the IEEE·1971· 11 cited
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Frequent Co-authors

W.O. Schlosser(9), W.C. Niehaus(5), S. H. Wemple(4), H. Fukui(4), H. M. Cox(4), James C. M. Hwang(4), J.V. DiLorenzo(4), D. J. Coleman(3), F.M. Magalhaes(3), J.P. Beccone(3), S. J. Perelli(3), Simon M. Sze(2), A. Jayaraman(2), D.E. Iglesias(2), C.B. Swan(2), R. B. Marcus(2), S. E. Haszko(2), S. P. Murarka(2), L. C. Luther(2), D.T. Young(1)