Richard Reiner

Fraunhofer Institute for Applied Solid State Physics — Germany

Physics and Astronomy · Physical Sciences

30h-index3.6kcitations183works1.52yr avg
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Research Topics

GaN-based semiconductor devices and materials(90), Silicon Carbide Semiconductor Technologies(67), Semiconductor materials and devices(38), Advanced Cellulose Research Studies(36), Lignin and Wood Chemistry(35)

Publications183 total

Slope Compensated Hysteretic Current Control of 800 V 4-Level GaN/SiC ANPC Converter
2025
Thermal Characterization of GaN Power HEMTs by Transient <i>I</i> – <i>V</i> Curves, Infrared Microscopy, and Thermal Simulation
IEEE Transactions on Electron Devices·2025Open Access
A Novel Compact Model Describing Current-Voltage Characteristics of Monolithic Bidirectional GaN Power HEMTs
2025
Higher Order Thermal Impedance Extraction of GaN Power HEMTs by <i>I</i>–<i>V</i> Measurements
IEEE Transactions on Electron Devices·2025· 1 citedOpen Access
Structure–property relationships of flexible, non-isocyanate polyurethane foams from lignin and castor oil-based reagents
RSC Advances·2025Open Access
Monolithically Integrated and Galvanically Isolated GaN Gate Driver
IEEE Open Journal of Power Electronics·2024· 2 citedOpen Access
From Two to Seven Level GaN π-Type Converter Operation for Increased Efficiency of Capacitive-Load Charging
2024· 1 cited
Monolithically Integrated Two-Stage GaN Gate Drivers
2024
Use of Renewable Alcohols in Autocatalytic Production of Aspen Organosolv Lignins
ACS Omega·2024· 6 citedOpen Access
Extraction of the Thermal Resistance and the Thermal Capacitance of GaN Power HEMTs by Using Pulsed <i>I</i>–<i>V</i> Measurements
IEEE Transactions on Electron Devices·2024· 1 citedOpen Access
Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs
2024· 4 cited
Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters
Electronics·2024· 2 citedOpen Access
Vertical GaN Transistor with Quasi-Monolithically Integrated HEMT Gate Driver and Sense-CAVET for Current Monitoring
2024· 2 cited
Reduced GaN Half-Bridge IC Switching Loss on Biased Si p-n Junctions
2023· 1 cited
How highly efficient power electronics transfers high electrocaloric material performance to heat pump systems
MRS Advances·2023· 9 citedOpen Access
Three-Phase Motor Inverter and Current Sensing GaN Power IC
Sensors·2023· 1 citedOpen Access
Switching of GaN CAVET With Quasi-Monolithic Integrated HEMT Gate Driver
IEEE Electron Device Letters·2023· 18 cited
Compact GaN Power ICs with Power HEMT, Gate Driver, Temperature Sensor, Current Sense-FET and Amplifier
2023· 7 cited
GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI
e-Prime - Advances in Electrical Engineering Electronics and Energy·2023· 10 citedOpen Access
GaN-HEMT with a Back-Gated Segment for High Voltage Cascodes
2023
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Frequent Co-authors

R. Quay(16), Patrick Waltereit(15), O. Ambacher(12), Umesh P. Agarwal(11), Sally A. Ralph(11), Carlos Báez(8), Ira A. Weinstock(7), Beatrix Weiss(7), Stefan Moench(7), Rajai H. Atalla(6), M. Mikulla(6), Alan W. Rudie(5), Craig L. Hill(4), Michael Basler(4), Ingmar Kallfass(4), M. Wespel(3), Philipp Döring(3), Hong Dong(2), James F. Snyder(2), Joshua A. Orlicki(2)