Stefan Moench

Fraunhofer Institute for Applied Solid State Physics — Germany

Physics and Astronomy · Physical Sciences

13h-index453citations43works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(32), Silicon Carbide Semiconductor Technologies(28), Semiconductor materials and devices(15), Advanced DC-DC Converters(5), Radio Frequency Integrated Circuit Design(5)

Publications43 total

A Novel Compact Model Describing Current-Voltage Characteristics of Monolithic Bidirectional GaN Power HEMTs
2025
Compact GaN Power ICs with Power HEMT, Gate Driver, Temperature Sensor, Current Sense-FET and Amplifier
2023· 7 cited
GaN-HEMT with a Back-Gated Segment for High Voltage Cascodes
2023
GaN Power Converter Applied to Electrocaloric Heat Pump Prototype and Carnot Cycle
2022· 5 cited
AlScN-Based SAW Magnetic Field Sensor for Isolated Closed-Loop Hysteretic Current Control of Switched-Mode Power Converters
IEEE Sensors Letters·2022· 5 citedOpen Access
GaN Active Rectifier Diode
IEEE Open Journal of Power Electronics·2022· 3 citedOpen Access
Enhancing Electrocaloric Heat Pump Performance by Over 99% Efficient Power Converters and Offset Fields
IEEE Access·2022· 16 citedOpen Access
Thin-Film-Based SAW Magnetic Field Sensors
Sensors·2021· 25 citedOpen Access
A GaN-Based Active Diode Circuit for Low-Loss Rectification
2021· 2 cited
Investigation of GaN-on-Si and GaN-on-SOI Substrate Capacitances for Discrete and Monolithic Half-Bridges
2021· 6 cited
Characteristics of Hetero-Integrated GaN-HEMTs on CMOS Technology by Micro-Transfer-Printing
2021· 5 cited
Design of Low-Resistance and Area-Efficient GaN-HEMTs for Low-Voltage Power Applications
Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)·2021· 5 cited
Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer
physica status solidi (a)·2021· 6 citedOpen Access
Building Blocks for GaN Power Integration
IEEE Access·2021· 39 citedOpen Access
Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer
physica status solidi (a)·2020· 14 citedOpen Access
A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts
2020· 13 cited
A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors
2020· 12 cited
Si-Substrate Removal for AlGaN/GaN Devices on PCB Carriers
2020· 4 cited
Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC
Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)·2020· 2 cited
PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors
IEEE Transactions on Power Electronics·2020· 36 citedOpen Access
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Frequent Co-authors

Richard Reiner(35), Patrick Waltereit(34), R. Quay(30), O. Ambacher(26), Ingmar Kallfass(24), Michael Basler(16), Beatrix Weiss(9), S. Müller(5), Dirk Meder(5), Fouad Benkhelifa(4), Jan Hückelheim(3), Marco Salvatore Costa(3), Alexander Barner(3), Thomas A. Kaden(2), Jingxiang Su(2), Simon Fichtner(2), Florian Niekiel(2), Thorsten Giese(2), Lars Thormählen(2), V. Lebedev(2)