Philipp Döring

Fraunhofer Institute for Applied Solid State Physics — Germany

Physics and Astronomy · Physical Sciences

9h-index176citations20works1.22yr avg
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Research Topics

GaN-based semiconductor devices and materials(17), Silicon Carbide Semiconductor Technologies(7), Semiconductor materials and devices(6), Advancements in Semiconductor Devices and Circuit Design(4), Ga2O3 and related materials(4)

Publications20 total

On the Impact of the Barrier Design, Carrier Density, and Temperature on High-Field Transport Properties in GaN-Based Heterostructures
IEEE Transactions on Electron Devices·2026
Thermal Characterization of GaN Power HEMTs by Transient <i>I</i> – <i>V</i> Curves, Infrared Microscopy, and Thermal Simulation
IEEE Transactions on Electron Devices·2025Open Access
High Efficiency and High Linearity 70 nm GaN Technology for Future SatCom Applications
2025
Electrical properties of SiN<i>y</i>/Al1−<i>x</i>Sc<i>x</i>N/GaN-based metal–insulator–semiconductor structures
Journal of Applied Physics·2025· 4 cited
Higher Order Thermal Impedance Extraction of GaN Power HEMTs by <i>I</i>–<i>V</i> Measurements
IEEE Transactions on Electron Devices·2025· 1 citedOpen Access
Thermal Characterization of GaN Power HEMTs by Transient I-V Curves, Infrared Microscopy, and Thermal Simulation
2025Open Access
Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs
2024· 4 cited
Low-field transport properties and scattering mechanisms of degenerate n-GaN by sputtering from a liquid Ga target
Applied Physics Express·2024Open Access
Vertical GaN Transistor with Quasi-Monolithically Integrated HEMT Gate Driver and Sense-CAVET for Current Monitoring
2024· 2 cited
(Invited) Recent Advances and Challenges of MOCVD-Grown AlScN/GaN HEMTs
ECS Meeting Abstracts·2023
Theoretical Limits of the Matching Bandwidth and Output Power of AlScN-Based HEMTs
IEEE Transactions on Electron Devices·2023· 16 citedOpen Access
Voltage-margin limiting mechanisms of AlScN-based HEMTs
Applied Physics Letters·2023· 15 citedOpen Access
Switching of GaN CAVET With Quasi-Monolithic Integrated HEMT Gate Driver
IEEE Electron Device Letters·2023· 18 cited
GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI
e-Prime - Advances in Electrical Engineering Electronics and Energy·2023· 10 citedOpen Access
Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies
e-Prime - Advances in Electrical Engineering Electronics and Energy·2023· 23 citedOpen Access
A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers With Low Channel Thickness
IEEE Transactions on Electron Devices·2023· 14 cited
On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors
Journal of Applied Physics·2022· 9 citedOpen Access
Technology of GaN-Based Large Area CAVETs With Co-Integrated HEMTs
IEEE Transactions on Electron Devices·2021· 21 citedOpen Access
Building Blocks for GaN Power Integration
IEEE Access·2021· 39 citedOpen Access
Anticipation of clause-final heads. Evidence from eye-tracking and SRNs
FreiDok plus (Universitätsbibliothek Freiburg)·2003

Frequent Co-authors

R. Quay(12), Richard Reiner(9), Patrick Waltereit(9), M. Mikulla(8), Michael Basler(7), Sebastian Krause(6), R. Driad(6), Stefan Mönch(6), Peter Brückner(5), Stefano Leone(5), O. Ambacher(4), Isabel Streicher(3), Matthias Sinnwell(3), Daniel Grieshaber(3), Fouad Benkhelifa(2), M. Dammann(2), Christian Friesicke(2), Lutz Kirste(2), S. Müller(2), Michael Dammann(2)