Klaas Strempel

Supply Chain Competence Center (Germany) — Germany

Physics and Astronomy · Physical Sciences

8h-index258citations18works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(15), Semiconductor materials and devices(6), Advancements in Semiconductor Devices and Circuit Design(4), Semiconductor Quantum Structures and Devices(3), ZnO doping and properties(3)

Publications18 total

Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs
2021
MicroLED arrays as novel structured micro illumination light engines (SMILE)
2021
Highly stable threshold voltage in GaN nanowire FETs: The advantages of <i>p</i>-GaN channel/Al2O3 gate insulator
Applied Physics Letters·2020· 23 cited
Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel
Semiconductor Science and Technology·2020· 21 citedOpen Access
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
Scientific Reports·2019· 39 citedOpen Access
Vertical GaN Nanowires and Nanoscale Light-Emitting-Diode Arrays for Lighting and Sensing Applications
ACS Applied Nano Materials·2019· 48 cited
3D GaN nanoarchitecture for field-effect transistors
Micro and Nano Engineering·2019· 51 citedOpen Access
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors
IEEE Transactions on Electron Devices·2019· 6 citedOpen Access
Top-Down Fabrication of Arrays of Vertical GaN Nanorods with Freestanding Top Contacts for Environmental Exposure
2018· 2 citedOpen Access
Nanoscale insights into structure size and surface effects in InGaN/GaN nanoLEDs
Zenodo (CERN European Organization for Nuclear Research)·2018Open Access
Nanoscale GaN LED arrays for chip-based optical nanoscope
Zenodo (CERN European Organization for Nuclear Research)·2018Open Access
Thermal performance analysis of GaN nanowire and fin-shaped power transistors based on self-consistent electrothermal simulations
Microelectronics Reliability·2018· 2 cited
Versatile 3D GaN processing for integrated high-aspect-ratio vertical nanodevices
Zenodo (CERN European Organization for Nuclear Research)·2018Open Access
Traceable Nanomechanical Metrology of GaN Micropillar Array
Advanced Engineering Materials·2018· 15 cited
Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${p}$ &lt;/tex-math&gt; &lt;/inline-formula&gt;-GaN Channel
IEEE Transactions on Electron Devices·2018· 37 cited
Performance analysis and simulation of vertical gallium nitride nanowire transistors
Solid-State Electronics·2018· 13 cited
3D device processing of GaN nanostructures for electronic and optoelectronic sensor platforms
Zenodo (CERN European Organization for Nuclear Research)·2018Open Access
Vertical 3D GaN Nanoarchitectures towards an Integrated Optoelectronic Biosensing Platform in Microbial Fuel Cells
2017· 1 citedOpen Access

Frequent Co-authors

A. Waag(18), Hutomo Suryo Wasisto(15), Muhammad Fahlesa Fatahilah(13), Yu Feng(11), Bernd Witzigmann(7), Jan Gülink(6), Joan Daniel Prades(6), Shinta Mariana(5), Friedhard Römer(5), Matteo Meneghini(5), Steffen Bornemann(5), Tony Granz(4), A. Bakin(4), Nicolai Markiewicz(4), H. W. Schumacher(3), Carlo De Santi(3), Gaudenzio Meneghesso(3), Enrico Zanoni(3), Gregor Scholz(3), Hendrik Spende(2)