T. Witters

IMEC — Belgium

Engineering · Physical Sciences

18h-index1.1kcitations95works4.02yr avg
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Research Topics

Semiconductor materials and devices(72), Advancements in Semiconductor Devices and Circuit Design(25), Copper Interconnects and Reliability(24), Advanced Memory and Neural Computing(21), Integrated Circuits and Semiconductor Failure Analysis(20)

Publications95 total

3D interconnects for quantum computing
2024· 4 cited
Monolithic TCAD simulation of phase-change memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) selector device
Solid-State Electronics·2022· 3 citedOpen Access
Exploration of Scandium Doping in SbTe for Phase Change Memory Application<sub/> <sub/>
IEEE Transactions on Electron Devices·2022· 8 cited
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors
2022 IEEE International Reliability Physics Symposium (IRPS)·2022· 1 citedOpen Access
Low-loss, low-temperature PVD SiN waveguides
2021· 7 cited
Process Integration of High Aspect Ratio Vias with a Comparison between Co and Ru Metallizations
2021· 4 cited
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability
2021· 3 cited
Supervia Process Integration and Reliability Compared to Stacked Vias Using Barrierless Ruthenium
2020· 4 cited
Carbon-Based Liner for RESET Current Reduction in Self-Heating Phase- Change Memory Cells
IEEE Transactions on Electron Devices·2020· 6 cited
Ovonic Threshold‐Switching Ge<sub><i>x</i></sub>Se<sub><i>y</i></sub> Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles
physica status solidi (RRL) - Rapid Research Letters·2020· 75 citedOpen Access
Co Active Electrode Enhances CBRAM Performance and Scaling Potential
2019· 15 cited
Three-Layer BEOL Process Integration with Supervia and Self-Aligned-Block Options for the 3 nm Node
2019· 16 cited
Co Active Electrode Enhances CBRAM Performance and Scaling Potential
IEEE Conference Proceedings·2019
Characterization by GISAXS and Electrochemical Impedance Spectroscopy of porous oxide films
2018
Key material parameters driving CBRAM device performances
Faraday Discussions·2018· 17 citedOpen Access
Half-threshold bias I&lt;inf&gt;off&lt;/inf&gt; reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers
2018· 25 cited
On the Key Impact of Composition of Ge-Te and Ge-Se Electrolytes on CBRAM Properties
2018· 4 cited
Engineering and Stack Optimization of Cu -Based Selector Devices for Low Power SCM Applications
2018· 2 cited
Atomistic investigation of the electronic structure, thermal properties and conduction defects in Ge-rich Ge&lt;inf&gt;x&lt;/inf&gt;Se&lt;inf&gt;1−x&lt;/inf&gt; materials for selector applications
2017· 19 cited
Thermally stable integrated Se-based OTS selectors with &gt;20 MA/cm<sup>2</sup> current drive, &gt;3.10<sup>3</sup> half-bias nonlinearity, tunable threshold voltage and excellent endurance
2017· 60 cited
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Frequent Co-authors

Sven Van Elshocht(15), Stefan De Gendt(14), T. Schram(12), Thierry Conard(11), Christoph Adelmann(10), Olivier Richard(9), Gouri Sankar Kar(9), Marc Heyns(9), M. Jurczak(8), A. Redolfi(8), Annelies Delabie(8), Matty Caymax(7), Sergiu Clima(7), Shreya Kundu(7), B. Govoreanu(7), N. Heylen(7), Vasile Paraschiv(7), K. De Meyer(7), Alexis Franquet(7), Wouter Devulder(6)