Haicheng Cao

Advanced Semiconductor Engineering (Taiwan) — Taiwan

Physics and Astronomy · Physical Sciences

17h-index830citations58works6.92yr avg
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Research Topics

GaN-based semiconductor devices and materials(36), Ga2O3 and related materials(19), ZnO doping and properties(18), Semiconductor materials and devices(13), Acoustic Wave Resonator Technologies(6)

Publications58 total

Structural strategies for high-efficiency AlGaN-based Far-UVC LEDs
Micro and Nanostructures·2025
A Pathway to Low-Shift Red LEDs: Bulk InGaN as the Active Region
ACS Applied Electronic Materials·2025
Band Alignment and Leakage Mechanism Analysis of p-Si/n-AlN Heterojunction Diodes with the Al <sub>2</sub> O <sub>3</sub> Interlayer
ACS Applied Electronic Materials·2025· 1 cited
Reverse current suppression of p-GaN diode using SiOx interlayer
Applied Physics Letters·2025
On Ga<sub>2</sub>O<sub>3</sub> Self‐Switching Nano‐Diodes
Advanced Electronic Materials·2025· 1 citedOpen Access
NiOx gate oxide for enhanced thermal stability of threshold voltage in GaN MIS-HEMTs up to 400 °C
Applied Physics Letters·2025· 2 citedOpen Access
High Rectification, Low Leakage p-Si/n-AlN Heterojunction PN Diode
IEEE Electron Device Letters·2025· 4 cited
Alleviate sidewall damage of InGaN green micro-LEDs by atomic layer etching
Optics Letters·2025· 6 cited
2.3-<b>μ</b>m deep UV micro-LEDs fabricated by self-aligned selective thermal oxidation process
Optics Letters·2025· 1 cited
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Applied Physics Letters·2025· 3 citedOpen Access
Author Correction: Synthesis of two-dimensional ordered graphdiyne membranes for highly efficient and selective water transport
Nature Water·2025Open Access
Synthesis of two-dimensional ordered graphdiyne membranes for highly efficient and selective water transport
Nature Water·2025· 14 cited
Performance Enhancement of n-Type AlN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment
IEEE Transactions on Electron Devices·2025· 11 cited
Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect
Light Science & Applications·2025· 38 citedOpen Access
Machine learning assisted plasmonic metascreen for enhanced broadband absorption in ultra-thin silicon films
Light Science & Applications·2025· 12 citedOpen Access
Toward crack-free AlN growth on silicon (111) by introducing boron incorporated buffer layer via MOCVD
Applied Physics Letters·2024· 4 citedOpen Access
Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate
Journal of Physics D Applied Physics·2024· 6 citedOpen Access
High-temperature operation of Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage
Japanese Journal of Applied Physics·2024· 6 citedOpen Access
Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire
Crystal Growth & Design·2024· 4 cited
Low contact resistivity at the 10−4 Ω cm2 level fabricated directly on n-type AlN
Applied Physics Letters·2024· 7 citedOpen Access
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Frequent Co-authors

Xiaohang Li(26), Lixia Zhao(18), Xiao Tang(16), Zhiyuan Liu(15), Tingang Liu(12), Yi Lu(12), Mingtao Nong(12), Xin Xi(10), Chao Yang(9), Shan Lin(8), Zhanhong Ma(8), Zixian Jiang(8), Jinmin Li(7), Glen Isaac Maciel García(7), Xuejiao Sun(7), Jing Li(6), Zhiguo Yu(6), Dhanu Chettri(6), Che‐Hao Liao(5), Na Xiao(5)