Glen Isaac Maciel García

Advanced Semiconductor Engineering (Taiwan) — Taiwan

Materials Science · Physical Sciences

7h-index218citations21works9.92yr avg
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Research Topics

Ga2O3 and related materials(15), GaN-based semiconductor devices and materials(11), ZnO doping and properties(8), Semiconductor materials and devices(8), Advanced Photocatalysis Techniques(5)

Publications21 total

Two Kelvin Operation of Ultrawide-Bandgap β-Ga <sub>2</sub> O <sub>3</sub> FinFETs and Logic Inverter Integrated Circuits
Nano Letters·2026Open Access
Monolithic β-Ga2O3 Gate Driver Integrated Circuit
Chip·2026· 1 citedOpen Access
Lateral Semiconductor–Free-Space Gate Transistors
Nano Letters·2025Open Access
Monolithically Integrated RTL-Based Inverters for Gate Driver IC Using <i>β</i>-Ga₂O₃ MOSFETs
IEEE Transactions on Electron Devices·2025· 1 cited
Unipolar <i>β</i>-Ga2O3 Pseudo-junction barrier Schottky diodes via Low-Cost magnesium diffusion process
APL Materials·2025Open Access
On Ga<sub>2</sub>O<sub>3</sub> Self‐Switching Nano‐Diodes
Advanced Electronic Materials·2025· 1 citedOpen Access
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Applied Physics Letters·2025· 4 cited
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Applied Physics Letters·2025· 3 citedOpen Access
Performance Enhancement of n-Type AlN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment
IEEE Transactions on Electron Devices·2025· 11 cited
Inductively Coupled Plasma Reactive Ion Etching of (−201) β‐Ga<sub>2</sub>O<sub>3</sub> Nano‐Fins
physica status solidi (b)·2024· 5 citedOpen Access
Pseudo-source gated beta-gallium oxide MOSFET
Applied Physics Letters·2024· 5 citedOpen Access
Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire
Crystal Growth & Design·2024· 4 cited
Field management in NiO<i> <sub>x</sub> </i>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> merged-PIN Schottky diodes: simulation studies and experimental validation
Journal of Physics D Applied Physics·2024· 4 cited
Three-dimensional integrated metal-oxide transistors
Nature Electronics·2024· 67 citedOpen Access
Significant improvement of n-contact performance and wall plug efficiency of AlGaN-based deep ultraviolet light-emitting diodes by atomic layer etching
Optics Letters·2024· 11 cited
Etching-free pixel definition in InGaN green micro-LEDs
Light Science & Applications·2024· 29 citedOpen Access
Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD
Applied Physics Letters·2024· 12 citedOpen Access
Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga<sub>2</sub>O<sub>3</sub>/NiO Semiconductors
ACS Applied Materials & Interfaces·2024· 21 citedOpen Access
Demonstration of β-Ga<sub>2</sub>O<sub>3</sub> nonvolatile flash memory for oxide electronics
Japanese Journal of Applied Physics·2023· 7 citedOpen Access
Monolithic <b> <i>β</i> </b>-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs
Applied Physics Letters·2023· 29 citedOpen Access
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Frequent Co-authors

Xiaohang Li(19), Xiao Tang(11), Vishal Khandelwal(11), Saravanan Yuvaraja(8), Ganesh Mainali(8), Haicheng Cao(7), Mritunjay Kumar(6), Zhiyuan Liu(6), Dhanu Chettri(6), Biplab Sarkar(6), Yi Lu(5), Tingang Liu(5), Mingtao Nong(5), Na Xiao(4), Jose Manuel Taboada Vasquez(3), Che‐Hao Liao(2), Ying Wu(2), Zixian Jiang(2), Manoj K. Rajbhar(2), Xiaohang Li(2)