Zhiyuan Liu

Advanced Semiconductor Engineering (Taiwan) — Taiwan

Physics and Astronomy · Physical Sciences

14h-index432citations39works8.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(23), Ga2O3 and related materials(14), ZnO doping and properties(11), Semiconductor materials and devices(11), Semiconductor Quantum Structures and Devices(7)

Publications39 total

Structural strategies for high-efficiency AlGaN-based Far-UVC LEDs
Micro and Nanostructures·2025
Surface dipole formation and electronic structure evolution on <i>β</i> -Ga2O3
Applied Physics Letters·2025
A Pathway to Low-Shift Red LEDs: Bulk InGaN as the Active Region
ACS Applied Electronic Materials·2025
Band Alignment and Leakage Mechanism Analysis of p-Si/n-AlN Heterojunction Diodes with the Al <sub>2</sub> O <sub>3</sub> Interlayer
ACS Applied Electronic Materials·2025· 1 cited
Reverse current suppression of p-GaN diode using SiOx interlayer
Applied Physics Letters·2025
III‐Nitride Micro‐Array Integration for Photon Transceiver
Laser & Photonics Review·2025· 2 cited
High Rectification, Low Leakage p-Si/n-AlN Heterojunction PN Diode
IEEE Electron Device Letters·2025· 4 cited
Alleviate sidewall damage of InGaN green micro-LEDs by atomic layer etching
Optics Letters·2025· 6 cited
2.3-<b>μ</b>m deep UV micro-LEDs fabricated by self-aligned selective thermal oxidation process
Optics Letters·2025· 1 cited
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Applied Physics Letters·2025· 3 citedOpen Access
Performance Enhancement of n-Type AlN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment
IEEE Transactions on Electron Devices·2025· 11 cited
Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect
Light Science & Applications·2025· 38 citedOpen Access
κ/β‐Ga<sub>2</sub>O<sub>3</sub> Type‐II Phase Heterojunction
Advanced Materials·2025· 31 citedOpen Access
Back-End-Of-Line Compatible Indium Oxide Thin-Film Transistor Enabling Cryogenic Operation Down to 2 Kelvin
SSRN Electronic Journal·2025Open Access
Pseudo-source gated beta-gallium oxide MOSFET
Applied Physics Letters·2024· 5 citedOpen Access
Low contact resistivity at the 10−4 Ω cm2 level fabricated directly on n-type AlN
Applied Physics Letters·2024· 7 citedOpen Access
Passivated indium oxide thin-film transistors with high field-effect mobility (128.3 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>) and low thermal budget (200 °C)
Journal of Physics D Applied Physics·2024· 3 citedOpen Access
Investigation into epitaxial growth optimization of a novel AlGaN/GaN HEMT structure for application in UV photodetectors
Science China Materials·2024· 4 cited
Significant improvement of n-contact performance and wall plug efficiency of AlGaN-based deep ultraviolet light-emitting diodes by atomic layer etching
Optics Letters·2024· 11 cited
Etching-free pixel definition in InGaN green micro-LEDs
Light Science & Applications·2024· 29 citedOpen Access
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Frequent Co-authors

Xiaohang Li(36), Yi Lu(25), Xiao Tang(18), Haicheng Cao(17), Na Xiao(11), Tingang Liu(11), Mingtao Nong(10), Zixian Jiang(8), Vishal Khandelwal(8), Saravanan Yuvaraja(8), Shibin Krishna(6), Glen Isaac Maciel García(6), Mritunjay Kumar(6), Dhanu Chettri(5), Zuojian Pan(5), Mohamed Ben Hassine(4), Rongyu Lin(4), Che‐Hao Liao(3), Na Xiao(3), Chuanju Wang(3)