D. Lancereau

III V Lab — France

Physics and Astronomy · Physical Sciences

7h-index169citations17works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(17), Radio Frequency Integrated Circuit Design(12), Semiconductor Quantum Structures and Devices(8), Semiconductor materials and devices(4), Silicon Carbide Semiconductor Technologies(2)

Publications17 total

Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes
Microelectronics Reliability·2018· 4 cited
Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
2016· 7 cited
ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
IEEE Electron Device Letters·2016· 58 cited
S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs
2014· 2 cited
InAlN/GaN HEMTs based L-band high-power packaged amplifiers
International Journal of Microwave and Wireless Technologies·2014· 12 cited
Réalisation d'amplificateurs de puissance en bande K en technologie de composants HEMTs AlInN/GaN
HAL (Le Centre pour la Communication Scientifique Directe)·2013
A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications
2012· 17 cited
160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management
2012· 4 cited
First demonstration of AlInN/GaN HEMTs amplifiers at K band
2012· 10 cited
Development of InAlN/GaN HEMTs Power Devices in S-Band
2011· 5 cited
Performances of AlInN/GaN HEMTs for Power Applications at Microwave Frequencies
HAL (Le Centre pour la Communication Scientifique Directe)·2010· 6 cited
Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-band
2009· 11 cited
State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium·2008· 33 cited
GaN technology for microwave applications
HAL (Le Centre pour la Communication Scientifique Directe)·2008
Réalisation et modélisation de composants passifs en Nitrure de Gallium (GaN) pour les circuits MMICs
HAL (Le Centre pour la Communication Scientifique Directe)·2007
Fabrication and modelling of passive components for GaN based MMICs
HAL (Le Centre pour la Communication Scientifique Directe)·2007
Microwave performances of gallium nitride based HEMT's devices
HAL (Le Centre pour la Communication Scientifique Directe)·2004

Frequent Co-authors

S. Piotrowicz(13), S.L. Delage(13), E. Chartier(12), M. Oualli(10), Olivier Jardel(10), J. Jacquet(9), R. Aubry(8), C. Dua(8), E. Morvan(8), N. Sarazin(6), M.A. Poisson(6), O. Patard(4), Tibault Reveyrand(4), N. Michel(3), C. Potier(3), Piero Gamarra(3), Tim Dean(3), Guillaume Callet(3), Raymond Quéré(3), Jérémy Dufraisse(3)