E. Chartier

University of Charleston — United States

Engineering · Physical Sciences

16h-index725citations82works0.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(51), GaN-based semiconductor devices and materials(43), Semiconductor Quantum Structures and Devices(26), Silicon Carbide Semiconductor Technologies(12), Semiconductor materials and devices(10)

Publications82 total

Behavioral Finance: The Impact of Artificial Intelligence and Social Media Analytics
SSRN Electronic Journal·2021· 8 citedOpen Access
STRUCTURAL CHARACTERIZATION OF BRITTLE FAULTS OF THE ST. LAWRENCE PLATFORM IN THE MONTREAL AREA, CANADA
Abstracts with programs - Geological Society of America·2020
ORDOVICIAN K-BENTONITES OF THE ST. LAWRENCE PLATFORM IN THE MONTREAL AREA, CANADA: LITHOLOGICAL, GEOPHYSICAL AND GEOCHEMICAL CHARACTERIZATION
Abstracts with programs - Geological Society of America·2020
10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
2019· 18 cited
10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
2019· 8 cited
Technologie InAlGaN/GaN/SiC à faibles effets mémoires délivrant 10W/mm à 30 GHz
HAL (Le Centre pour la Communication Scientifique Directe)·2019
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes
Microelectronics Reliability·2018· 4 cited
First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology
2018· 14 cited
Editorial Hommage à Pierre Vrignaud
L’Orientation scolaire et professionnelle·2018Open Access
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
International Journal of Microwave and Wireless Technologies·2017· 18 cited
InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz
2016· 6 cited
ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
IEEE Electron Device Letters·2016· 58 cited
S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs
2014· 2 cited
12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications
2014· 16 cited
Réalisation d'amplificateurs de puissance en bande K en technologie de composants HEMTs AlInN/GaN
HAL (Le Centre pour la Communication Scientifique Directe)·2013
A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications
2012· 17 cited
160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management
2012· 4 cited
Characterizations of InAlN/AlN/GaN Transistors for S-Band Applications
HAL (Le Centre pour la Communication Scientifique Directe)·2011· 1 cited
Development of InAlN/GaN HEMTs Power Devices in S-Band
2011· 5 cited
Caractéristiques électriques des transistors en technologie InAlN/AlN/GaN pour les applications en bande S
HAL (Le Centre pour la Communication Scientifique Directe)·2011
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Frequent Co-authors

S.L. Delage(31), S. Piotrowicz(24), J. Jacquet(16), Olivier Jardel(16), D. Floriot(16), C. Dua(15), M. Oualli(14), R. Aubry(12), E. Morvan(12), O. Patard(8), D. Lancereau(8), C. Potier(8), Piero Gamarra(8), N. Sarazin(8), N. Michel(7), C. Lacam(7), H. Blanck(7), C. Brylinski(7), S. Cassette(7), Tibault Reveyrand(6)