D. Floriot

United Monolithic Semiconductor (France) — France

Engineering · Physical Sciences

17h-index1.1kcitations98works0.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(69), GaN-based semiconductor devices and materials(56), Semiconductor Quantum Structures and Devices(31), Advanced Power Amplifier Design(25), Silicon Carbide Semiconductor Technologies(16)

Publications98 total

Flexible Substrates toward Deformable, Stretchable and Deployable Smart-Skins Integrating Energy-Efficient Active-Antennas Using Correlation Technologies
2025
Reliability Assessment of Heterogeneous Integrated FOWLP Test Structure Packages for Mixed RF Digital Front-End Application
2024
Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications
2019
Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band
2018· 29 cited
InAlGaN/GaN HEMT technology for Ka band applications
2018 22nd International Microwave and Radar Conference (MIKON)·2018· 2 cited
Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties
IEEE Electron Device Letters·2017· 22 cited
Linearity characterization of GaN HEMT technologies through innovative on-wafer multi-tone load-pull measurements
2016· 6 cited
Robustness investigation by load pull measurement of industrial 0.25-μm AlGaN-GaN HEMTs
2015
Influence of packaging materials on GaN RF power devices
2015· 1 cited
Comprehensive analysis of GR noise in InGaP–GaAs HBT by physics-based simulation and low frequency characterization
Journal of Computational Electronics·2014· 4 cited
Evaluation of GaN FET power performance reduction due to nonlinear charge trapping effects
2014· 3 cited
GH25-10: New qualified power GaN HEMT process from technology to product overview
2014· 32 cited
Future of GaN RF Technology in Europe
2014· 1 cited
Nonlinear transistor modeling for industrial 0.25-µm AlGaN-GaN HEMTs
European Microwave Conference·2013
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress
Microelectronics Reliability·2013· 28 cited
A comparison of 2-D simulations and measurements of low frequency noise on InGaP/GaAs HBT transistors at low and high level injection
2013
Méthode rigoureuse de simulation du bruit GR assisté par piège dans les composants semi-conducteurs : Application à des TBH en technologie GaInP/GaAs
HAL (Le Centre pour la Communication Scientifique Directe)·2013
Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection
HAL (Le Centre pour la Communication Scientifique Directe)·2013
Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies
International Journal of Microwave and Wireless Technologies·2013· 3 cited
Numerical simulation and characterization of trapping noise in InGaP–GaAs heterojunctions devices at high injection
Solid-State Electronics·2013· 8 cited
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Frequent Co-authors

H. Blanck(16), E. Chartier(14), Raymond Quéré(12), S.L. Delage(11), Tibault Reveyrand(10), S. Piotrowicz(9), P. Auxemery(9), J. Jacquet(8), M. Camiade(8), Michel Campovecchio(8), S. Heckmann(7), Olivier Jardel(6), Z. Ouarch(6), R. Aubry(6), Jean-Michel Nébus(6), Benoît Lambert(6), J. Obregón(6), Philippe Eudeline(6), S. Cassette(6), Jean-Pierre Teyssier(5)