R. Aubry

KU Leuven — Belgium

Physics and Astronomy · Physical Sciences

14h-index633citations56works1.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(46), Radio Frequency Integrated Circuit Design(19), Semiconductor materials and devices(14), Silicon Carbide Semiconductor Technologies(13), Semiconductor Quantum Structures and Devices(10)

Publications56 total

Microfluidic Device Manufacturing by Light-Based 3D Printing for Organoid Vascularization
Methods in molecular biology·2025· 1 cited
Experimental Study on U-Beam Separator Device for Separating Solids from Gases
Energies·2023Open Access
Modeling of equilibrium water vapor adsorption isotherms on activated carbon, alumina and hopcalite
Fluid Phase Equilibria·2022· 22 citedOpen Access
Modelling of Water Vapor Adsorption and Desorption in an Industrial Medical Air Dryer
SSRN Electronic Journal·2022· 1 citedOpen Access
Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT
ECS Journal of Solid State Science and Technology·2018· 94 citedOpen Access
Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
2016· 7 cited
InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz
2016· 6 cited
ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
IEEE Electron Device Letters·2016· 58 cited
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs
Solid-State Electronics·2015· 8 cited
Growth optimisation of GaInN/GaN MQW RCLED structures. Device performances and reliability
Università del Salento·2015Open Access
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs
Microelectronics Reliability·2014· 10 cited
S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs
2014· 2 cited
12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications
2014· 16 cited
A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications
2012· 17 cited
160W InAlN/GaN HEMTs Amplifier at 2 GHz with Optimized Thermal Management
2012· 4 cited
Development of InAlN/GaN HEMTs Power Devices in S-Band
2011· 5 cited
43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers
2010 IEEE MTT-S International Microwave Symposium·2010· 13 cited
43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers
2010 IEEE MTT-S International Microwave Symposium·2010· 47 cited
Deep traps analysis in AlGaN/GaN heterostructure transistors
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 26 cited
A new nonlinear HEMT model for AlGaN/GaN switch applications
European Microwave Integrated Circuits Conference·2009· 23 cited
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Frequent Co-authors

S.L. Delage(26), J. Jacquet(20), S. Piotrowicz(17), C. Dua(17), E. Morvan(14), E. Chartier(13), Olivier Jardel(12), Christophe Gaquière(10), M. Oualli(9), N. Sarazin(9), M.A. Poisson(9), D. Lancereau(8), D. Floriot(8), Y. Cordier(8), O. Patard(7), Tibault Reveyrand(7), Piero Gamarra(6), Virginie Hoel(6), J.C. de Jaeger(6), Raymond Quéré(6)