R. Darwich

Atomic Energy Commission of Syria — SY

Engineering · Physical Sciences

5h-index225citations18works0.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Silicon and Solar Cell Technologies(11), Semiconductor Quantum Structures and Devices(9), Thin-Film Transistor Technologies(8), Silicon Nanostructures and Photoluminescence(5), Spectroscopy and Quantum Chemical Studies(4)

Publications18 total

Laplace deep level transient spectroscopy study of intrinsic hydrogenated amorphous silicon
Journal of Non-Crystalline Solids·2015· 3 cited
ZnO Nanopowders as Chemical Sensor to Malathion Vapor
Acta Physica Polonica A·2014· 2 citedOpen Access
Carrier emission from defects in intrinsic hydrogenated amorphous silicon studied by junction-capacitance methods
Journal of Non-Crystalline Solids·2013· 1 cited
Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques
Thin Solid Films·2011· 3 cited
High deposition rate hydrogenated polymorphous silicon characterized by different capacitance techniques
Thin Solid Films·2011· 3 cited
Revealing substructures of H4 and H5 hole traps in p-type InP using Laplace deep-level transient spectroscopy
Journal of Applied Physics·2010· 3 cited
Electric field effect on the carrier capture of deep traps in p-type InP
Journal of Applied Physics·2010· 2 cited
Electric field effect on the emission rate of H4F and H4S hole traps in InP
Journal of Applied Physics·2009· 3 cited
DLTS properties of iron defects in crystalline silicon used in solar cells
Materials Science and Engineering B·2004· 1 cited
DLTS properties of iron defects in crystalline silicon used in solar cells
Materials Science and Engineering B·2004· 6 cited
Experimental determination of the hole capture kinetics of H4F deep trap in electron-irradiated highly doped <i>p</i>-type InP
Journal of Applied Physics·2004· 2 cited
Effect of fill-pulse parameters on deep-level transient spectroscopy peaks in highly doped <i>p</i>-type InP
Journal of Applied Physics·2000· 67 cited
Evidence for two distinct defects contributing to the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>H</mml:mi><mml:mn>4</mml:mn><mml:mn/></mml:math>deep-level transient spectroscopy peak in electron-irradiated InP
Physical review. B, Condensed matter·1998· 9 cited
Photo-induced changes of hydrogen bonding in semi-insulating iron-doped indium phosphide
Solid State Communications·1995· 4 cited
Observation by infrared transmission spectroscopy and infrared ellipsometry of a new hydrogen bond during light-soaking of a-Si:H
Philosophical Magazine B·1995· 39 cited
Hydrogen passivated defects in InP
Solid State Communications·1995
Experimental study of the hydrogen complexes in indium phosphide
Physical review. B, Condensed matter·1993· 74 cited
Interaction between X-H Bonds and the Lattice in III-V Compounds Determined from Temperature-Dependent Spectroscopic Studies
Materials science forum·1993· 3 cited

Frequent Co-authors

B. Pajot(4), B. Massarani(3), R. Rahbi(2), François Gendron(2), Pere Roca i Cabarrocas(2), H. Hamadeh(2), Chris Ewels(2), B. Rose(1), D. Robein(1), B. Theys(1), C. Porte(1), S. Vallon(1), Razvigor Ossikovski(1), Pascal Morin(1), K. Zellama(1), Fowzi Awad(1), M. Kaaka(1), C-Y Song(1), P. Roca i Cabarrocas(1), Chunli Song(1)