R. Rahbi

Université Paris Cité — France

Physics and Astronomy · Physical Sciences

8h-index264citations16works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(9), Advanced Chemical Physics Studies(5), Semiconductor materials and devices(5), Silicon and Solar Cell Technologies(5), Semiconductor materials and interfaces(4)

Publications16 total

Thermal nitridation of p-type porous silicon in ammonia
Thin Solid Films·1996· 35 cited
The hydrogen complexes in gallium arsenide and indium phosphide doped with magnesium
Solid State Communications·1995
Neutralisation of group vi donors by hydrogen in gallium arsenide
Solid State Communications·1994· 16 cited
Experimental study of the hydrogen complexes in indium phosphide
Physical review. B, Condensed matter·1993· 74 cited
A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
Materials science forum·1993· 8 cited
Interaction between X-H Bonds and the Lattice in III-V Compounds Determined from Temperature-Dependent Spectroscopic Studies
Materials science forum·1993· 3 cited
Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling
Materials science forum·1993· 8 cited
Hydrogen diffusion and acceptor passivation in <i>p</i>-type GaAs
Journal of Applied Physics·1993· 47 cited
Optical waveguides formed by deuterium passivation of acceptors in Si doped <i>p</i>-type GaAs epilayers
Journal of Applied Physics·1992· 4 cited
Diffusion and electronic states of hydrogen in<i>n</i>-type GaAs and<i>n</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As
Physical review. B, Condensed matter·1992· 16 cited
Diffusion of Hydrogen and Hydrogen-Dopant Interactions in Si Doped GaAs and GaAlAS Alloys
MRS Proceedings·1992
Optical waveguides formed by hydrogen passivation of dopant atoms in p-type GaAs:Si epilayers
Materials Science and Engineering B·1991
Modeling of hydrogen diffusion in p-type GaAs:Zn
Physica B Condensed Matter·1991· 32 cited
Etude de la diffusion de l'hydrogène et des interactions hydrogène accepteur dans gaas de type p
1991
Modeling of hydrogen diffusion in p-type GaAs:Zn
Elsevier eBooks·1991· 1 cited
Interactions Between Hydrogen and Silicon Acceptors in p-Type GaAs:Si
MRS Proceedings·1987· 20 cited

Frequent Co-authors

J. Chevallier(10), B. Pajot(8), B. Theys(8), C. Grattepain(4), B. Machayekhi(3), R. Darwich(2), D. Mathiot(2), Manijeh Razeghi(2), R.C. Newman(2), J. M. Zavada(2), B.L. Weiss(2), I.V. Bradley(2), R. Addinall(2), H. A. Jenkinson(2), B. Rose(1), D. Robein(1), C. Porte(1), François Gendron(1), A. Marbeuf(1), R. C. Logan(1)