I.-C. Chen

Industrial Technology Research Institute — Taiwan

Engineering · Physical Sciences

12h-index407citations23works0.02yr avg
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Research Topics

Semiconductor materials and devices(20), Advancements in Semiconductor Devices and Circuit Design(18), Integrated Circuits and Semiconductor Failure Analysis(5), Copper Interconnects and Reliability(4), Analog and Mixed-Signal Circuit Design(3)

Publications23 total

The design of analog front-end circuitry for 1x HD-DVD PRML read channel
2006· 1 cited
Extensions of the effective thickness theory of oxide breakdown
2003· 8 cited
A 0.25 μm gate length CMOS technology for 1V low power applications-device design and power/performance considerations
2002· 4 cited
A shallow trench isolation study for 0.25/0.18 μm CMOS technologies and beyond
2002· 28 cited
Pass transistor designs using pocket implant to improve manufacturability for 256 Mbit DRAM and beyond
2002· 13 cited
A pass transistor design methodology for 256 Mbit DRAM and beyond
2002· 4 cited
High performance sub-half micron CMOS using rapid thermal processing
2002· 20 cited
Degradation of deep sub-micron isolation by vacuum ultraviolet radiation from low temperature back end plasma-assisted processes
2002· 2 cited
Physical oxide thickness extraction and verification using quantum mechanical simulation
2002· 56 cited
A comparative study of LOCOS-type isolations for 256 Mbit DRAM
2002· 2 cited
A device design study of 0.25 μm gate length CMOS for 1 V low power applications
2002· 5 cited
A scaled 1.8 V, 0.18 μm gate length CMOS technology: device design and reliability considerations
2002· 32 cited
Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1997· 27 cited
Performance and reliability enhancement for CVD tungsten polycided CMOS transistors due to fluorine incorporation in the gate oxide
IEEE Electron Device Letters·1994· 17 cited
A physical model for the gate current injection in p-channel MOSFET's
IEEE Electron Device Letters·1993· 5 cited
A quantitative physical model for the band-to-band tunneling-induced substrate hot electron injection in MOS devices
IEEE Transactions on Electron Devices·1992· 12 cited
TDDB on poly-gate single doping type capacitors
1992· 7 cited
Effects of poly depletion on the estimate of thin dielectric lifetime
IEEE Electron Device Letters·1991· 25 cited
Simple gate-to-drain overlapped MOSFETs using poly spacers for high immunity to channel hot-electron degradation
IEEE Electron Device Letters·1990· 9 cited
Gate current injection initiated by electron band-to-band tunneling in MOS devices
IEEE Electron Device Letters·1989· 19 cited
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Frequent Co-authors

Amitava Chatterjee(7), M. Rödder(7), C.W. Teng(4), D. J. Coleman(3), Kelly Taylor(3), S. Aur(2), Soumya Shubhra Nag(2), Inayat Ali(2), D. Rogers(2), K. Joyner(2), Mark E. Mason(2), Doug Mercer(2), John Kuehne(2), A. L. Esquivel(2), S. Ashburn(2), S.J. Wang(2), H. L. Tigelaar(2), J. Liu(2), P.K. Mozumder(2), Bo Shen(2)