J. Maiz

Intel (United States) — United States

Engineering · Physical Sciences

19h-index2.9kcitations44works0.02yr avg
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Research Topics

Semiconductor materials and devices(29), Copper Interconnects and Reliability(20), Integrated Circuits and Semiconductor Failure Analysis(11), Electronic Packaging and Soldering Technologies(10), Advancements in Semiconductor Devices and Circuit Design(10)

Publications44 total

Future device scaling - Beyond traditional CMOS
2009· 1 cited
Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technology
IEEE International Reliability Physics Symposium proceedings·2009· 13 cited
Effect of BTI Degradation on Transistor Variability in Advanced Semiconductor Technologies
IEEE Transactions on Device and Materials Reliability·2008· 85 cited
Dielectric breakdown in a 45 nm high-k/metal gate process technology
2008· 26 cited
BTI reliability of 45 nm high-K + metal-gate process technology
2008· 130 cited
Simulation of Cross-Sectional Nanoindentation in Interconnect Structures with Cohesive Elements
2008
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
2007· 825 cited
Effect of NBTI degradation on transistor variability in advanced technologies
2007· 10 cited
A 45nmLogicTechnology withHigh-k+Metal GateTransistors, Strained Silicon, 9CuInterconnect Layers, 193nmDryPatterning, and100%Pb-free Packaging
2007
Influence of phonon, geometry, impurity, and grain size on Copper line resistivity
Applied Physics Letters·2006· 150 cited
Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction
Applied Physics Letters·2006· 101 cited
Effect of passivation on stress relaxation in electroplated copper films
Journal of materials research/Pratt's guide to venture capital sources·2006· 47 cited
Adhesion studies in integrated circuit interconnect structures
Engineering Failure Analysis·2006· 15 cited
Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices
2006· 203 cited
Methods for forming a frequency bulk acoustic resonator with uniform frequency utilizing multiple trimming layers and structures formed thereby
The Journal of the Acoustical Society of America·2006· 1 cited
Electromigration-Induced Plastic Deformation in Cu Damascene Interconnect Lines as Revealed by Synchrotron X-Ray Microdiffraction
MRS Proceedings·2006· 12 cited
Introduction to the Special Issue on Soft Errors and Data Integrity in Terrestrial Computer Systems
IEEE Transactions on Device and Materials Reliability·2005· 10 cited
Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements
Journal of Applied Physics·2005· 72 citedOpen Access
A New Technique for the Characterization of the Adhesion in Integrated Circuit Interconnect Structures
MRS Proceedings·2005· 1 cited
Electromigration lifetime and critical void volume
Applied Physics Letters·2004· 38 cited
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Frequent Co-authors

K. Mistry(7), T. Ghani(7), Sangwoo Pae(7), T. Scherban(7), S.A. Hareland(6), C. Prasad(6), R. Chau(5), M. Hattendorf(5), J. Hicks(5), Kelin J. Kuhn(5), J.M. Sánchez(5), M.R. Elizalde(5), J.M. Martínez–Esnaola(5), J. Gil Sevillano(5), C. Auth(4), B. McIntyre(4), J. Sandford(4), Christopher W. Thomas(4), M. Brazier(4), P. Hazucha(4)