Steven Buchoff

Northrop Grumman (United States) — United States

Engineering · Physical Sciences

3h-index61citations3works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(3), Semiconductor materials and devices(3), Copper Interconnects and Reliability(2), Multilevel Inverters and Converters(1)

Publications3 total

Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs
IEEE Transactions on Electron Devices·2008· 12 cited
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
IEEE Transactions on Electron Devices·2008· 44 cited
Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25–200 °C operating temperatures
2007· 5 cited

Frequent Co-authors

Robert S. Howell(3), Stephen Van Campen(3), Ty McNutt(3), M.E. Sherwin(3), Ranbir Singh(3), A. Ezis(2), Bettina Nechay(2), R.C. Clarke(2), Christopher F. Kirby(1), Harold Hearne(1)