Stephen Van Campen

Northrop Grumman (United States) — United States

Engineering · Physical Sciences

7h-index200citations18works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(14), Semiconductor materials and devices(9), Advancements in Semiconductor Devices and Circuit Design(5), GaN-based semiconductor devices and materials(2), Multilevel Inverters and Converters(2)

Publications17 total

SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process
2022· 2 cited
Robust Thermal Performance of a Flat-Plate Oscillating Heat Pipe During High-Gravity Loading
Journal of Heat Transfer·2011· 55 cited
Experimental Investigation of a Flat-Plate Oscillating Heat Pipe During High-Gravity Loading
2011· 6 cited
Design and yields of 1200-V recessed-implanted-gate SiC vertical-channel JFETs for power switching applications
2009
10 kV Silicon Carbide Junction Barrier Schottky Rectifier
Materials science forum·2008· 2 cited
Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion
Materials science forum·2008· 6 cited
Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETs
IEEE Transactions on Electron Devices·2008· 12 cited
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
IEEE Transactions on Electron Devices·2008· 44 cited
Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25–200 °C operating temperatures
2007· 5 cited
Exploring the design space of rugged seven lithographic level silicon carbide vertical JFETs for the development of 1200-V, 50-A devices
2007· 7 cited
Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter
Materials science forum·2007· 8 cited
Demonstration of High-Voltage SiC VJFET Cascode in a Half-Bridge Inverter
Materials science forum·2007· 1 citedOpen Access
2.1 mΩ-cm2, 1.6 kV 4H-Silicon Carbide VJFET for Power Applications
2006· 5 cited
Silicon Carbide JFET Cascode Switch for Power Conditioning Applications
2005· 19 cited
2.1 m/spl Omega/-cm2, 1.6 kV 4H-Silicon Carbide VJFET for Power Applications
International Semiconductor Device Research Symposium·2005
100 A and 3.1 kV 4H-SiC GTO thyristors
2003· 3 cited
7 kV 4H-SiC GTO Thyristors
MRS Proceedings·2002· 6 cited

Frequent Co-authors

Ty McNutt(11), Victor Veliadis(7), R.C. Clarke(6), Harold Hearne(6), Robert S. Howell(5), M.E. Sherwin(5), Ranbir Singh(5), Eric J. Stewart(5), A. Ezis(4), Megan McCoy(4), Steven Buchoff(3), John Reichl(3), Chris Clarke(3), Scott M. Thompson(2), Aaron A. Hathaway(2), C. D. Smoot(2), C. Wilson(2), Hongbin Ma(2), L. Greenberg(2), Brian R. Osick(2)