M. Radosavljević

Intel (United States) — United States

Engineering · Physical Sciences

37h-index5.3kcitations108works2.72yr avg
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Research Topics

Semiconductor materials and devices(45), Advancements in Semiconductor Devices and Circuit Design(36), Carbon Nanotubes in Composites(26), GaN-based semiconductor devices and materials(23), Graphene research and applications(20)

Publications108 total

Future of Power and High‐Speed/RF Electronics with Advanced High‐Performance GaN and Heterogeneous Integration with Silicon CMOS
physica status solidi (a)·2026
Evolution of 300mm GaN-on-Si Technology with Monolithically Integrated Si PMOS: From Technology Development to RF and MMWAVE Circuit Demonstrations
2025
RF Front-End Building Blocks for 6G cmWave Radio Base Station in 300 mm GaN-on-Si Technology
2025· 1 cited
Stress in Single- and Multiribbon Complementary FETs (CFETs): Evolution in Process Flow and Impact on Drive Current
IEEE Transactions on Electron Devices·2025
Positive Bias Temperature Instability Saturation in Scaled Oxide Sub‐100 nm <i>L</i> <sub>g</sub> Enhancement Mode High‐K Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistors
physica status solidi (a)·2025
A 28GHz Beamformer Element Demonstration Using Monolithically Integrated GaN and Si Transistors in 300mm GaN-on-Si Technology
2025· 2 cited
Magnetization switching and detection by PtxSn1−x alloys
Applied Physics Reviews·2025· 1 cited
Unconventional spin-to-charge conversion in MnPd3
Applied Physics Letters·2025· 2 cited
Metallurgical and process challenges in flash butt welding of different dimensions of micro-alloyed steel on continuous pickle line
2025Open Access
50 nm DrGaN in 3D monolithic GaN MOSHEMT and Silicon PMOS process on 300 mm GaN-on-Si(111)
Power Electronic Devices and Components·2024· 4 citedOpen Access
30nm Channel-Length Enhancement-Mode GaN MOSHEMT Transistors on a 300mm GaN-on-TRSOI Engineered Substrate
2024· 4 cited
Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS
2024· 2 cited
Ultra-High-<i>k</i> Ferroelectric BaTiO<sub>3</sub> Perovskite in the Gate Stack for Two-Dimensional WSe<sub>2</sub> p-Type High-Performance Transistors
Nano Letters·2024· 8 cited
PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors
2024· 6 cited
Advancements in 300 mm GaN-on-Si Technology With Industry’s First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors
IEEE Microwave and Wireless Technology Letters·2024· 10 cited
DrGaN: an Integrated CMOS Driver-GaN Power Switch Technology on 300mm GaN-on-Si with E-mode GaN MOSHEMT and 3D Monolithic Si PMOS
2023· 15 cited
High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling
2023· 22 cited
Demonstration of a Stacked CMOS Inverter at 60nm Gate Pitch with Power Via and Direct Backside Device Contacts
2023· 30 cited
Process Innovations for Future Technology Nodes with Back-Side Power Delivery and 3D Device Stacking
2023· 16 cited
Process integration and future outlook of 2D transistors
Nature Communications·2023· 110 citedOpen Access
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Frequent Co-authors

G. Dewey(17), R. Chau(15), J. Kavalieros(14), Han Wui Then(14), M. Metz(13), W. Rachmady(12), Phaedon Avouris(10), Suman Datta(8), B. Chu-Kung(8), Niloy Mukherjee(8), R. Pillarisetty(8), P. Fischer(8), J. M. Fastenau(7), A. T. Charlie Johnson(7), N. Thomas(7), A. Oni(7), Joerg Appenzeller(6), D. Lubyshev(6), Thoe K. Michaelos(6), R. Kotlyar(5)