R. Pillarisetty

Intel (United States) — United States

Physics and Astronomy · Physical Sciences

18h-index1.9kcitations52works36.52yr avg
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Research Topics

Quantum and electron transport phenomena(28), Advancements in Semiconductor Devices and Circuit Design(28), Semiconductor materials and devices(18), Semiconductor Quantum Structures and Devices(11), Physics of Superconductivity and Magnetism(10)

Publications52 total

Operating two exchange-only qubits in parallel
Nature·2025Open Access
12-Spin-Qubit Arrays Fabricated on a 300 mm Semiconductor Manufacturing Line
Nano Letters·2024· 33 citedOpen Access
12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line
arXiv (Cornell University)·2024Open Access
Probing single electrons across 300-mm spin qubit wafers
Nature·2024· 113 citedOpen Access
Probing single electrons across 300 mm spin qubit wafers
arXiv (Cornell University)·2023· 6 citedOpen Access
Mitigating Impact of Defects On Performance with Classical Device Engineering of Scaled Si/SiGe Qubit Arrays
2022 International Electron Devices Meeting (IEDM)·2022· 2 cited
High Volume Cryogenic Characterization of Silicon Spin Qubit Devices from a 300mm Process Line
2022
Valley Splitting in Silicon from the Interference Pattern of Quantum Oscillations
Physical Review Letters·2022· 11 citedOpen Access
Qubits made by advanced semiconductor manufacturing
Nature Electronics·2022· 26 citedOpen Access
Si MOS and Si/SiGe quantum well spin qubit platforms for scalable quantum computing
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 8 cited
Toward scalable spin qubits: Si/SiGe quantum dot devices built on a 300mm process line
Bulletin of the American Physical Society·2021
All Optical 300mm process line for spin qubit devices
Bulletin of the American Physical Society·2021
High Noise Margin, Digital Logic Design Using Josephson Junction Field-Effect Transistors for Cryogenic Computing
IEEE Transactions on Applied Superconductivity·2021· 13 cited
State-of-the-art Quantum Dot devices from a full 300mm process line: towards scalable spin qubit devices
Bulletin of the American Physical Society·2020
High Volume Electrical Characterization of Semiconductor Qubits
2019· 30 citedOpen Access
Full 300mm fin based QD device characterization
Bulletin of the American Physical Society·2019
Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology
2018· 35 cited
Wafer-scale silicon for quantum computing
arXiv (Cornell University)·2018Open Access
Temperature Dependence of Spin Relaxation and Charge Noise in Silicon Spin Qubits
Bulletin of the American Physical Society·2018
300mm process line for qubit fabrication
Bulletin of the American Physical Society·2018
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Frequent Co-authors

Hubert C. George(18), R. Kotlyar(15), Thomas F. Watson(15), Emanuel Tutuc(15), M. Shayegan(15), Otto Zietz(14), E. P. De Poortere(14), Florian Luthi(13), Eric Henry(13), Stephanie A. Bojarski(13), J. M. Roberts(13), James S. Clarke(13), Samuel F. Neyens(11), M. Radosavljević(10), R. Chau(10), G. Dewey(9), Lester Lampert(9), Menno Veldhorst(9), Giordano Scappucci(9), Payam Amin(8)