Eric Henry

Intel (United States) — United States

Physics and Astronomy · Physical Sciences

8h-index255citations20works36.52yr avg
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Research Topics

Quantum and electron transport phenomena(15), Advancements in Semiconductor Devices and Circuit Design(9), Semiconductor materials and devices(5), Quantum-Dot Cellular Automata(4), Semiconductor Quantum Structures and Devices(3)

Publications20 total

Operating two exchange-only qubits in parallel
Nature·2025Open Access
12-Spin-Qubit Arrays Fabricated on a 300 mm Semiconductor Manufacturing Line
Nano Letters·2024· 33 citedOpen Access
12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line
arXiv (Cornell University)·2024Open Access
Probing single electrons across 300-mm spin qubit wafers
Nature·2024· 113 citedOpen Access
Incorporating the benefits of vegetative filter strips into risk assessment and risk management of pesticides
Integrated Environmental Assessment and Management·2023· 4 citedOpen Access
Probing single electrons across 300 mm spin qubit wafers
arXiv (Cornell University)·2023· 6 citedOpen Access
Mitigating Impact of Defects On Performance with Classical Device Engineering of Scaled Si/SiGe Qubit Arrays
2022 International Electron Devices Meeting (IEDM)·2022· 2 cited
High Volume Cryogenic Characterization of Silicon Spin Qubit Devices from a 300mm Process Line
2022
Qubits made by advanced semiconductor manufacturing
Nature Electronics·2022· 26 citedOpen Access
Extraction of dipolar coupling constants from low-frequency electrically detected magnetic resonance and near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation
Journal of Applied Physics·2021· 4 cited
Si MOS and Si/SiGe quantum well spin qubit platforms for scalable quantum computing
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 8 cited
Effects of 29Si and 1H on the near-zero field magnetoresistance response of Si/SiO2 interface states: Implications for oxide tunneling currents
Applied Physics Letters·2021· 11 cited
Electrically detected magnetic resonance and near-zero field magnetoresistance in 28Si/28SiO2
Journal of Applied Physics·2021· 8 cited
Toward scalable spin qubits: Si/SiGe quantum dot devices built on a 300mm process line
Bulletin of the American Physical Society·2021
All Optical 300mm process line for spin qubit devices
Bulletin of the American Physical Society·2021
State-of-the-art Quantum Dot devices from a full 300mm process line: towards scalable spin qubit devices
Bulletin of the American Physical Society·2020
High Volume Electrical Characterization of Semiconductor Qubits
2019· 30 citedOpen Access
A Study of Primary Collision Dynamics in Inverse-Kinematics Reaction of 78Kr on 40Ca at a Bombarding Energy of 10 MeV per Nucleon
UR Research (University of Rochester)·2015Open Access
A prototype silicon double quantum dot with dispersive microwave readout
Journal of Applied Physics·2014· 10 cited
Development of a Si/SiO$_2$–based double quantum dot charge qubit with dispersive microwave readout
Bulletin of the American Physical Society·2011

Frequent Co-authors

Otto Zietz(13), Thomas F. Watson(13), Florian Luthi(13), Hubert C. George(13), R. Pillarisetty(13), Stephanie A. Bojarski(12), James S. Clarke(12), Samuel F. Neyens(11), J. M. Roberts(10), R. Kotlyar(9), Lester Lampert(8), Felix Borjans(6), Román Caudillo(6), David J. Michalak(6), Aditi Nethwewala(5), Guoji Zheng(5), Brennen K. Mueller(5), Andrew Wagner(4), Elliot J. Connors(4), J. Corrigan(4)