Thomas F. Watson

Intel (United States) — United States

Physics and Astronomy · Physical Sciences

22h-index2.0kcitations66works36.52yr avg
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Research Topics

Quantum and electron transport phenomena(43), Advancements in Semiconductor Devices and Circuit Design(35), Semiconductor materials and devices(16), Quantum Computing Algorithms and Architecture(15), Semiconductor Quantum Structures and Devices(11)

Publications66 total

Operating two exchange-only qubits in parallel
Nature·2025Open Access
12-Spin-Qubit Arrays Fabricated on a 300 mm Semiconductor Manufacturing Line
Nano Letters·2024· 33 citedOpen Access
12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line
arXiv (Cornell University)·2024Open Access
Probing single electrons across 300-mm spin qubit wafers
Nature·2024· 113 citedOpen Access
Probing single electrons across 300 mm spin qubit wafers
arXiv (Cornell University)·2023· 6 citedOpen Access
Mitigating Impact of Defects On Performance with Classical Device Engineering of Scaled Si/SiGe Qubit Arrays
2022 International Electron Devices Meeting (IEDM)·2022· 2 cited
High Volume Cryogenic Characterization of Silicon Spin Qubit Devices from a 300mm Process Line
2022
Qubits made by advanced semiconductor manufacturing
Nature Electronics·2022· 26 citedOpen Access
The Impact of Purchasing Cyber Insurance on the Enhancement of Operational Cyber Risk Mitigation of U.S. Banks - A Case Study
2022 IEEE 12th Annual Computing and Communication Workshop and Conference (CCWC)·2022· 8 cited
Si MOS and Si/SiGe quantum well spin qubit platforms for scalable quantum computing
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 8 cited
A Fully Integrated Cryo-CMOS SoC for State Manipulation, Readout, and High-Speed Gate Pulsing of Spin Qubits
IEEE Journal of Solid-State Circuits·2021· 61 cited
Qubits in quantum dot arrays made with all-optical, 300mm wafer lithography
Bulletin of the American Physical Society·2021
High volume manufacturing of silicon spin qubits
Bulletin of the American Physical Society·2021
Microsecond single-spin readout in semiconductors in the “strong-response” regime
Bulletin of the American Physical Society·2021
Toward scalable spin qubits: Si/SiGe quantum dot devices built on a 300mm process line
Bulletin of the American Physical Society·2021
All Optical 300mm process line for spin qubit devices
Bulletin of the American Physical Society·2021
13.1 A Fully Integrated Cryo-CMOS SoC for Qubit Control in Quantum Computers Capable of State Manipulation, Readout and High-Speed Gate Pulsing of Spin Qubits in Intel 22nm FFL FinFET Technology
2021· 80 cited
Spatial noise correlations in a Si/SiGe two-qubit device from Bell state coherences
Physical review. B./Physical review. B·2020· 36 citedOpen Access
Supporting data for "Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences"
Zenodo (CERN European Organization for Nuclear Research)·2020Open Access
Supporting data for "Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences"
Zenodo (CERN European Organization for Nuclear Research)·2020Open Access
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Frequent Co-authors

Lieven M. K. Vandersypen(16), M. Y. Simmons(16), Daniel R. Ward(13), D. E. Savage(13), M. A. Eriksson(13), M. G. Lagally(12), S. N. Coppersmith(12), Bent Weber(11), Xiao Xue(11), Hubert C. George(10), R. Pillarisetty(10), Otto Zietz(9), Florian Luthi(9), Eric Henry(9), James S. Clarke(9), Samuel F. Neyens(8), Daniel Keith(8), R. Kotlyar(8), Stephanie A. Bojarski(8), Tobias Krähenmann(8)