Jenn‐Gwo Hwu

National Taiwan University — Taiwan

Engineering · Physical Sciences

19h-index1.6kcitations310works0.72yr avg
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Research Topics

Semiconductor materials and devices(268), Advancements in Semiconductor Devices and Circuit Design(177), Integrated Circuits and Semiconductor Failure Analysis(91), Semiconductor materials and interfaces(64), Advanced Memory and Neural Computing(40)

Publications310 total

Synaptic Capacitance Modulation in MOS Capacitors via Lateral Coupling Effect for Neuromorphic Computing
ECS Meeting Abstracts·2025
Prolonged Transient Current Behavior and Memory Application of Coupling Concentric Metal-Insulator-Semiconductor Tunnel Diodes (MISTDs)
ECS Meeting Abstracts·2025
Inversion-sensing SiO2-based MOS capacitive synapse for neuromorphic computing
Applied Physics Letters·2025
Enhancement of the Transient Current Behavior of MIS Tunnel Diodes With Ultra-Edge-Thickened (UET) Oxide under the Consideration of Tunnel Oxide Areas
IEEE Journal of the Electron Devices Society·2025· 1 citedOpen Access
Low Power Logic Functions in Non-Planar Oxide Metal–Insulator–Semiconductor Tunnel Diodes via Tunneling–Coupling Current Competition
IEEE Journal of the Electron Devices Society·2025Open Access
Control of current polarity in concentric metal–insulator-semiconductor tunnel diode (MISTD) structures by designed coupling rings
Applied Physics A·2024· 2 cited
Study on the Transient Behaviors of Concentric MIS Tunneling Diodes by Rapid Voltage Switching at Ring/Center and Read at Center/Ring
IEEE Transactions on Electron Devices·2024· 1 cited
Low Interface Trap Density 4H-SiC MIS Structure With SiO₂ Grown by Sub- 1000 °C Intermittent Spray Hydrated Oxidation (ISHO) for UV Sensor Applications
IEEE Transactions on Electron Devices·2024· 1 cited
Role of oxide charges on the voltage and current coupling effects between adjacent devices examined by concentric metal-insulator-semiconductor (MIS) tunnel diodes with ultra-thin oxide
Physica Scripta·2024· 3 citedOpen Access
Low-Bias Weak Ambient Light Sensor Using Edge-Removed MISIM Device With High Sensitivity
IEEE Sensors Journal·2024· 2 cited
Impact of Oxide Charges on The Minority Carrier Response in MOS(p) Devices With Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Gate Stacks under Strong Inversion Condition
ECS Meeting Abstracts·2024
Unveiling Sub-60 mV/decade Subthreshold Swing in The Oxide Local Thinning (OLT) Gated MIS Tunnel Diodes by TCAD Simulations
ECS Meeting Abstracts·2024
Impact of Oxide Charges on The Minority Carrier Response in MOS(p) Devices With Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Gate Stacks under Strong Inversion Condition
ECS Transactions·2024
Unveiling Sub-60 mV/decade Subthreshold Swing in The Oxide Local Thinning (OLT) Gated MIS Tunnel Diodes by TCAD Simulations
ECS Transactions·2024
Transient Responses of The Majority and Minority Carriers During Rapid Reduction of The Inversion Charge in an MOS Structure
2024
Enhanced coupling current in center MIS tunnel diode by effective control of the edge trapping in ring with Al2O3/SiO2 gate stack
Applied Physics A·2023· 1 cited
Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation
IEEE Transactions on Electron Devices·2023
Influence of Outer Oxide Charges on the Electrostatics of Metal-Insulator-Semiconductor Tunnel Diode
ECS Meeting Abstracts·2023
Current Polarity Changeable Concentric MIS Tunnel Photodiode With Linear Photodetectivity via Inner Gate Biasing and Outer Ring Short-Circuit Operation
IEEE Transactions on Electron Devices·2023· 6 cited
Role of Proportion of Surrounding Gate on the Improved Transient Behavior of MIS Tunnel Diode with Ultra-Thin Metal Surrounded Gate (UTMSG)
ECS Meeting Abstracts·2023
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Frequent Co-authors

Ming‐Jer Jeng(4), Jui-Yuan Yen(3), Jen-Yuan Cheng(3), Chien-Shun Liao(3), Yen-Kai Lin(3), Yen-Hao Shih(2), Szu-Wei Huang(2), S.-W. Huang(2), Chao‐Chi Hong(2), Chien-Chih Lin(2), Jen-Chou Tseng(2), Chia-Ming Hsu(2), Chih-Yao Wang(2), Chiao-Ti Huang(1), C. S. Kuo(1), Jen‐Feng Hsu(1), L.-S. Lee(1), M.‐J. Tsai(1), Yang‐Hsin Shih(1), Steven Lin(1)