Ryan J. Gasvoda

Colorado School of Mines — United States

Engineering · Physical Sciences

8h-index277citations19works2.52yr avg
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Research Topics

Semiconductor materials and devices(16), Plasma Diagnostics and Applications(7), Electronic and Structural Properties of Oxides(6), Copper Interconnects and Reliability(3), Catalytic Processes in Materials Science(2)

Publications19 total

Area-Selective Atomic Layer Deposition of SiO <sub>2</sub> on SiO <sub>2</sub> with Alkanethiol Functionalized Cu as the Nongrowth Surface
ACS Applied Materials & Interfaces·2026
Improving SiO2 to SiN<i>x</i> etch selectivity during atomic layer etching with multiple selective organic pre-functionalization steps
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2024· 5 cited
Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2022· 4 cited
(Invited) Transport and Reaction Kinetics of Thermal ALE in High Aspect Ratio Hafnium Oxide Structures
ECS Meeting Abstracts·2022
Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2022· 6 cited
Area-selective atomic layer deposition of Al2O3 on SiN<i>x</i> with SiO2 as the nongrowth surface
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2021· 16 cited
Inhibiting Thermal and O<sub>2</sub> Plasma Assisted ALD of SiO<sub>2 </sub>using Fluorothiol Passivation Layer on Cu
ECS Meeting Abstracts·2021
Designing Anion-Exchange Ionomers with Oriented Nanoscale Phase Separation at a Silver Interface
The Journal of Physical Chemistry C·2021· 4 citedOpen Access
Selective functionalization of partially etched SiN<i>x</i> to enhance SiO2 to SiN<i>x</i> etch selectivity
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2021· 5 cited
Gas-phase surface functionalization of SiN<i>x</i> with benzaldehyde to increase SiO2 to SiN<i>x</i> etch selectivity in atomic layer etching
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2021· 10 cited
Selective Gas-Phase Functionalization of SiO<sub>2</sub> and SiN<i><sub>x</sub></i> Surfaces with Hydrocarbons
Langmuir·2021· 18 cited
Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2021· 16 cited
Strategies to Enhance Etch Selectivity During Plasma-Assisted Atomic Layer Etching of Silicon-Based Dielectrics
Digital Collections of Colorado (Colorado State University)·2020
Investigating Silver Nanoparticle Interactions with Quaternary Ammonium Functionalized Triblock Copolymers and Their Effect on Midblock Crystallinity
ACS Applied Polymer Materials·2020· 8 citedOpen Access
Etch selectivity during plasma-assisted etching of SiO2 and SiN<i>x</i>: Transitioning from reactive ion etching to atomic layer etching
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2020· 77 cited
Vacancy Healing as a Desorption Tool: Oxygen Triggered Removal of Stored Ammonia from NiO<sub>1–<i>x</i></sub>/MOR Validated by Experiments and Simulations
ACS Applied Energy Materials·2020· 6 cited
Surface prefunctionalization of SiO2 to modify the etch per cycle during plasma-assisted atomic layer etching
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2019· 25 cited
Gas Phase Organic Functionalization of SiO<sub>2</sub> with Propanoyl Chloride
Langmuir·2018· 14 cited
Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO<sub>2</sub>
ACS Applied Materials & Interfaces·2017· 63 cited

Frequent Co-authors

Sumit Agarwal(14), Eric A. Hudson(8), Wanxing Xu(5), Scott Wang(4), Zhonghao Zhang(3), Dennis M. Hausmann(3), Andreas Fischer(3), Aaron Routzahn(3), Jim Sims(3), Thorsten Lill(3), Paul C. Lemaire(2), Kashish Sharma(2), Nora Catherine Buggy(2), Yifeng Du(2), Mei‐Chen Kuo(2), Söenke Seifert(2), E. Bryan Coughlin(2), Andrew M. Herring(2), Xue Wang(2), Prabhat Kumar(2)