Paul C. Lemaire

Lam Research (United States) — United States

Engineering · Physical Sciences

18h-index1.3kcitations34works14.02yr avg
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Research Topics

Semiconductor materials and devices(21), Electronic and Structural Properties of Oxides(13), Catalytic Processes in Materials Science(9), Metal-Organic Frameworks: Synthesis and Applications(6), Copper Interconnects and Reliability(6)

Publications34 total

Blocking mechanisms in area-selective ALD by small molecule inhibitors of different sizes: Steric shielding versus chemical passivation
Applied Surface Science·2024· 26 citedOpen Access
Blocking Mechanisms in Area-Selective Ald by Small Molecule Inhibitors Of Different Sizes: Steric Shielding Versus Chemical Passivation
SSRN Electronic Journal·2024· 2 citedOpen Access
Ultraviolet photo-enhanced atomic layer deposition for improving dielectric properties of low temperature deposited Al2O3
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2022· 4 cited
Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors
The Journal of Physical Chemistry C·2022· 51 citedOpen Access
Functionalization of the SiO<sub>2</sub> Surface with Aminosilanes to Enable Area-Selective Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub>
Langmuir·2022· 33 cited
Extending growth inhibition during area-selective atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> on aminosilane-functionalized SiO<sub>2</sub>
Chemical Communications·2022· 4 cited
Area-selective atomic layer deposition of Al2O3 on SiN<i>x</i> with SiO2 as the nongrowth surface
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2021· 16 cited
Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects
2021· 3 cited
Isotropic Atomic Layer Etching in High Aspect Ratio Structures
ECS Meeting Abstracts·2021
Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2021· 16 cited
Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO2
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2020· 29 citedOpen Access
Direct observation of inhibitor and selective deposition on nanoscale patterned structure (Conference Presentation)
2020
Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2019· 18 cited
(Invited) Challenges and Opportunities for Selective Area Processing in High Volume Manufacturing (HVM)
ECS Meeting Abstracts·2019
<i>Ab initio</i> analysis of nucleation reactions during tungsten atomic layer deposition on Si(100) and W(110) substrates
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2018· 4 cited
Tungsten–Carbon Nanotube Composite Photonic Crystals as Thermally Stable Spectral‐Selective Absorbers and Emitters for Thermophotovoltaics
Advanced Energy Materials·2018· 87 cited
Thermally Driven Self-Limiting Atomic Layer Etching of Metallic Tungsten Using WF<sub>6</sub> and O<sub>2</sub>
ACS Applied Materials & Interfaces·2018· 39 cited
Thermal Selective Vapor Etching of TiO<sub>2</sub>: Chemical Vapor Etching via WF<sub>6</sub> and Self-Limiting Atomic Layer Etching Using WF<sub>6</sub> and BCl<sub>3</sub>
Chemistry of Materials·2017· 46 cited
Reversible Low-Temperature Metal Node Distortion during Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> on UiO-66-NH<sub>2</sub> Metal–Organic Framework Crystal Surfaces
ACS Applied Materials & Interfaces·2017· 92 cited
Atomic Layer Deposition and Controlling Film and Crystal Nucleation.
2017Open Access
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Frequent Co-authors

Gregory N. Parsons(18), Dennis M. Hausmann(11), Kashish Sharma(8), Junjie Zhao(6), Sarah E. Atanasov(6), Christopher J. Oldham(5), Howard J. Walls(5), Gregory W. Peterson(5), Mark D. Losego(5), Wanxing Xu(5), Sumit Agarwal(5), Philip S. Williams(4), Sarah D. Shepherd(4), W. M. M. Kessels(4), Bo Gong(3), Matthew A. Browe(3), Berç Kalanyan(3), Marc J. M. Merkx(3), Tania E. Sandoval(3), Adriaan J. M. Mackus(3)