Dennis M. Hausmann

Lam Research (United States) — United States

Engineering · Physical Sciences

26h-index3.0kcitations42works14.02yr avg
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Research Topics

Semiconductor materials and devices(38), Electronic and Structural Properties of Oxides(23), Copper Interconnects and Reliability(13), Catalytic Processes in Materials Science(11), Silicon Nanostructures and Photoluminescence(5)

Publications42 total

Blocking mechanisms in area-selective ALD by small molecule inhibitors of different sizes: Steric shielding versus chemical passivation
Applied Surface Science·2024· 26 citedOpen Access
Blocking Mechanisms in Area-Selective Ald by Small Molecule Inhibitors Of Different Sizes: Steric Shielding Versus Chemical Passivation
SSRN Electronic Journal·2024· 2 citedOpen Access
Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors
The Journal of Physical Chemistry C·2022· 51 citedOpen Access
Functionalization of the SiO<sub>2</sub> Surface with Aminosilanes to Enable Area-Selective Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub>
Langmuir·2022· 33 cited
Extending growth inhibition during area-selective atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> on aminosilane-functionalized SiO<sub>2</sub>
Chemical Communications·2022· 4 cited
Area-selective atomic layer deposition of Al2O3 on SiN<i>x</i> with SiO2 as the nongrowth surface
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2021· 16 cited
Characterizing Self-Assembled Monolayer Breakdown in Area-Selective Atomic Layer Deposition
Langmuir·2021· 38 citedOpen Access
Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects
2021· 3 cited
Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2021· 16 cited
Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO2
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2020· 29 citedOpen Access
Effect of Multilayer versus Monolayer Dodecanethiol on Selectivity and Pattern Integrity in Area-Selective Atomic Layer Deposition
ACS Applied Materials & Interfaces·2020· 44 cited
Mechanism of Precursor Blocking by Acetylacetone Inhibitor Molecules during Area-Selective Atomic Layer Deposition of SiO<sub>2</sub>
Chemistry of Materials·2020· 64 citedOpen Access
Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2019· 18 cited
Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2019· 114 citedOpen Access
(Invited) Challenges and Opportunities for Selective Area Processing in High Volume Manufacturing (HVM)
ECS Meeting Abstracts·2019
Surface reactions of aminosilane precursors during N<sub>2</sub> plasma‐assisted atomic layer deposition of SiN<i><sub>x</sub></i>
Plasma Processes and Polymers·2019· 12 cited
Area-Selective Atomic Layer Deposition Assisted by Self-Assembled Monolayers: A Comparison of Cu, Co, W, and Ru
Chemistry of Materials·2019· 183 cited
Gas Phase Organic Functionalization of SiO<sub>2</sub> with Propanoyl Chloride
Langmuir·2018· 14 cited
Thermal Atomic Layer Etching of Silica and Alumina Thin Films Using Trimethylaluminum with Hydrogen Fluoride or Fluoroform
ACS Applied Materials & Interfaces·2018· 28 cited
Formation and Ripening of Self-Assembled Multilayers from the Vapor-Phase Deposition of Dodecanethiol on Copper Oxide
Chemistry of Materials·2018· 41 citedOpen Access
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Frequent Co-authors

Sumit Agarwal(12), Paul C. Lemaire(11), Roy G. Gordon(8), Kashish Sharma(8), W. M. M. Kessels(7), Rafaiel A. Ovanesyan(6), Jill Becker(5), Katie L. Nardi(5), Simon D. Elliott(5), Jon Henri(5), Wanxing Xu(5), Stacey F. Bent(4), Marc J. M. Merkx(4), Tania E. Sandoval(4), Adriaan J. M. Mackus(4), Nerissa Draeger(3), Seigi Suh(3), Ekaterina A. Filatova(3), Tzu‐Ling Liu(3), Ryan J. Gasvoda(3)