Patrick Vogt

University of Bremen — Germany

Materials Science · Physical Sciences

29h-index6.3kcitations127works3.32yr avg
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Research Topics

Ga2O3 and related materials(39), GaN-based semiconductor devices and materials(30), ZnO doping and properties(24), Graphene research and applications(22), Semiconductor Quantum Structures and Devices(15)

Publications127 total

Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga2O3 Schottky diodes
APL Materials·2025· 1 citedOpen Access
Stark manifold ultraviolet emission in Gd-implanted <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si108.svg" display="inline" id="d1e676"> <mml:mi mathvariant="normal">β</mml:mi> </mml:math> -Ga <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si109.svg" display="inline" id="d1e681"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msub> </mml:math> O <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si110.svg" display="inline" id="d1e689"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> </mml:msub> </mml:math> thin films
Materials Today Physics·2025Open Access
Suboxides and subselenides: intermediate reaction products to form Ga<sub>2</sub>O<sub>3</sub>, Ga<sub>2</sub>Se<sub>3</sub>, In<sub>2</sub>O<sub>3</sub>, In<sub>2</sub>Se<sub>3</sub>, SnO<sub>2</sub>, and SnSe<sub>2</sub> during molecular-beam epitaxy
Physical Chemistry Chemical Physics·2024· 2 citedOpen Access
Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy
Advanced Electronic Materials·2024· 3 citedOpen Access
Adsorption-controlled growth of homoepitaxial <i>c</i>-plane sapphire films
APL Materials·2024· 5 citedOpen Access
Composition and strain of the pseudomorphic <i>α</i>-phase intermediate layer at the Ga2O3/Al2O3 interface
APL Materials·2024· 5 citedOpen Access
Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy
2024· 1 cited
Growth, catalysis, and faceting of α-Ga2O3 and α-(In<i>x</i>Ga1−<i>x</i>)2O3 on <i>m</i>-plane α-Al2O3 by molecular beam epitaxy
APL Materials·2024· 16 citedOpen Access
Erratum: “Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy” [APL Mater. 11, 111113 (2023)]
APL Materials·2024Open Access
Investigation of composition and origin of the intermediate layers at the Ga2O3/AlN and Ga2O3/Al2O3 interfaces
BIO Web of Conferences·2024Open Access
Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy
arXiv (Cornell University)·2023Open Access
Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy
APL Materials·2023· 29 citedOpen Access
Correction to “Nucleation Window of Ga<sub>2</sub>O<sub>3</sub> and In<sub>2</sub>O<sub>3</sub> for Molecular Beam Epitaxy on (0001) Al<sub>2</sub>O<sub>3</sub>”
Crystal Growth & Design·2023
Indium: A surfactant for the growth of <i>ɛ</i>/<i>κ</i>-Ga2O3 by molecular beam epitaxy
APL Materials·2023· 7 citedOpen Access
Nucleation Window of Ga<sub>2</sub>O<sub>3</sub> and In<sub>2</sub>O<sub>3</sub> for Molecular Beam Epitaxy on (0001) Al<sub>2</sub>O<sub>3</sub>
Crystal Growth & Design·2023· 9 cited
Silicon-doped <i>β</i>-Ga2O3 films grown at 1 <i>µ</i>m/h by suboxide molecular-beam epitaxy
APL Materials·2023· 49 citedOpen Access
Growth of <i>α</i>-Ga<sub>2</sub>O<sub>3</sub> on <i>α</i>-Al<sub>2</sub>O<sub>3</sub> by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy
Japanese Journal of Applied Physics·2023· 12 citedOpen Access
Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy
arXiv (Cornell University)·2022Open Access
Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer
Journal of Applied Physics·2022· 7 cited
Controlled Si doping of <b> <i>β</i> </b>-Ga2O3 by molecular beam epitaxy
Applied Physics Letters·2022· 41 cited
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Frequent Co-authors

G. Le Lay(11), W. Richter(11), N. Esser(10), Michael Kneissl(9), Jonathan P. McCandless(8), Paola De Padova(7), Andrea Resta(7), Debdeep Jena(6), Huili Grace Xing(6), W. G. Schmidt(5), F. Bechstedt(5), T. Hannappel(5), S. Visbeck(5), Darrell G. Schlom(5), Markus Pristovsek(5), D. Skuridina(5), M. Weyers(4), Thomas Bruhn(4), A. M. Frisch(4), David A. Muller(4)