R. James

Engineering · Physical Sciences

9h-index2.9kcitations12works0.02yr avg
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Research Topics

Semiconductor materials and devices(9), Advancements in Semiconductor Devices and Circuit Design(9), Integrated Circuits and Semiconductor Failure Analysis(5), Ferroelectric and Negative Capacitance Devices(4), Low-power high-performance VLSI design(3)

Publications12 total

Reliability Enhancement of Low Power TSPC Flip Flop
2018
Review of Full Adder Performance Analysis Using Kogge Stone Adder and Magnetic Tunnel Junction
2018· 3 cited
A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size
2014· 522 cited
Intrinsic transistor reliability improvements from 22nm tri-gate technology
2013· 166 cited
A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors
2012· 749 cited
High performance 32nm logic technology featuring 2<sup>nd</sup> generation high-k + metal gate transistors
2009· 184 cited
A 32nm logic technology featuring 2<sup>nd</sup>-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm<sup>2</sup> SRAM cell size in a 291Mb array
2008· 184 cited
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
2007· 825 cited
A 45nmLogicTechnology withHigh-k+Metal GateTransistors, Strained Silicon, 9CuInterconnect Layers, 193nmDryPatterning, and100%Pb-free Packaging
2007
A 65nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57 μm/sub 2/ SRAM cell
2005· 230 cited
An advanced low power, high performance, strained channel 65nm technology
2005· 63 cited
Probing and wire bonding of aluminum capped copper pads
2003· 9 cited

Frequent Co-authors

C. Kenyon(8), S. Sivakumar(7), T. Ghani(6), C. Auth(6), J. Neirynck(6), Leonard C. Pipes(6), J. Sebastián(6), T. Troeger(6), M. Bost(6), R. Heussner(6), J. V. Seiple(5), M. Brazier(5), S. Natarajan(5), R. Grover(4), Dennis G. Hanken(4), M. Hattendorf(4), J. Hicks(4), Sangwoo Pae(4), M. B. Prince(4), J. Sandford(4)