Leonard C. Pipes

Intel (United States) — United States

Engineering · Physical Sciences

12h-index3.0kcitations22works5.02yr avg
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Research Topics

Semiconductor materials and devices(8), Advancements in Semiconductor Devices and Circuit Design(8), Spectroscopy and Quantum Chemical Studies(7), Advanced Chemical Physics Studies(4), Ferroelectric and Negative Capacitance Devices(4)

Publications21 total

Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)·2022· 40 cited
A 10nm high performance and low-power CMOS technology featuring 3<sup>rd</sup> generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects
2017· 354 cited
A 14nm logic technology featuring 2&lt;sup&gt;nd&lt;/sup&gt;-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 &amp;#x00B5;m&lt;sup&gt;2&lt;/sup&gt; SRAM cell size
2014· 522 cited
NMOS source-drain extension ion implantation into heated substrates
2014· 13 cited
A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors
2012· 749 cited
High performance 32nm logic technology featuring 2&lt;sup&gt;nd&lt;/sup&gt; generation high-k + metal gate transistors
2009· 184 cited
A 32nm logic technology featuring 2&lt;sup&gt;nd&lt;/sup&gt;-generation high-k + metal-gate transistors, enhanced channel strain and 0.171&amp;#x03BC;m&lt;sup&gt;2&lt;/sup&gt; SRAM cell size in a 291Mb array
2008· 184 cited
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
2007· 825 cited
A 45nmLogicTechnology withHigh-k+Metal GateTransistors, Strained Silicon, 9CuInterconnect Layers, 193nmDryPatterning, and100%Pb-free Packaging
2007
Characterization and reduction of a new particle defect mode in sub-0.25 μm semiconductor process flows
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2005· 5 cited
Structure and dynamics from polarized parent/product photofragmentation spectroscopy
Faraday Discussions·1999· 6 cited
Photofragmentation of <i>M</i>-State Polarized Molecules:  Comparison of Quantum and Semiclassical Treatments
The Journal of Physical Chemistry A·1997· 8 cited
Experimental and theoretical photofragmentation dynamics of rovibronic-magnetic state-selected ND3
Journal of the Chemical Society Faraday Transactions·1997· 9 cited
True quantum state-to-quantum state chemistry: Experimental determination of the transition dipole matrix
1997
Extraction of the transition dipole matrix from the photodissociation of oriented/aligned parent molecules
The Journal of Chemical Physics·1996· 15 cited
Virtual angular momentum: The dynamics of inverting molecules in an electrostatic hexapole field
The Journal of Chemical Physics·1996· 1 cited
Determination of transition dipole matrix elements for the 266 nm photofragmentation of ∣JKM〉 state-selected CD3I
Chemical Physics Letters·1995· 7 cited
Rotational state-selective photofragmentation of CD 3 I at 266 nm: determination of the transition dipole matrix
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1995· 1 cited
N,K Rotational Level Populations of CD3 from the 266 nm Photofragmentation of |JKM) State-Selected CD3I
The Journal of Physical Chemistry·1995· 32 cited
Chemically Amplified Voltammetric Enzyme Electrodes for Oxidizable Pharmaceuticals
Analytical Chemistry·1994· 42 cited
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Frequent Co-authors

Delroy A. Baugh(9), T. Troeger(7), T. Ghani(6), R. James(6), C. Kenyon(6), M. B. Prince(6), D. Bergstrom(6), Dennis G. Hanken(5), M. Hattendorf(5), J. Neirynck(5), J. Sandford(5), J. V. Seiple(5), S. Sivakumar(5), M. Bost(5), M. Brazier(5), Markus J. Buehler(5), R. Heussner(5), Nathan Brandstater(5), G. Ding(4), R. Grover(4)