L.S. Driscoll

Newcastle University — United Kingdom

Engineering · Physical Sciences

10h-index393citations16works0.02yr avg
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Research Topics

Semiconductor materials and devices(15), Advancements in Semiconductor Devices and Circuit Design(14), Integrated Circuits and Semiconductor Failure Analysis(10), Silicon Carbide Semiconductor Technologies(3), Nanowire Synthesis and Applications(2)

Publications16 total

Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method
Journal of Applied Physics·2006· 9 cited
Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface
2006
Doubling speed using strained Si/SiGe CMOS technology
Thin Solid Films·2005· 2 cited
Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics·2005· 31 cited
High performance strained Si.SiGe n-channel MOSFETs: impact of alloy composition and layer architecture
2005
Study of Single- and Dual-Channel Designs for High-Performance Strained-Si–SiGe n-MOSFETs
IEEE Transactions on Electron Devices·2004· 34 cited
N-MOSFET performance in single and dual channel strained Si/SiGe CMOS architectures
2004
Optimization of Alloy Composition for High-Performance Strained-Si–SiGe N-Channel MOSFETs
IEEE Transactions on Electron Devices·2004· 20 cited
Evaluation of strained Si/SiGe material for high performance CMOS
Semiconductor Science and Technology·2004· 10 cited
Optimisation of channel thickness in strained Si/SiGe MOSFETs
2004· 10 cited
Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices
Materials Science and Engineering B·2004· 13 cited
Design, fabrication and characterisation of strained Si∕SiGe MOS transistors
IEE Proceedings - Circuits Devices and Systems·2004· 24 cited
Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics·2003· 16 cited
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
IEEE Transactions on Electron Devices·2003· 86 cited
C–V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design
Semiconductor Science and Technology·2003· 34 cited
A model for capacitance reconstruction from measured lossy MOS capacitance voltage characteristics
Semiconductor Science and Technology·2002· 104 cited

Frequent Co-authors

K.S.K. Kwa(16), Sarah H. Olsen(16), Sanatan Chattopadhyay(15), A.G. O’Neill(14), David J. Norris(4), A.G. Cullis(4), Douglas J. Paul(4), A.M. Waite(3), Y.T. Tang(3), A G R Evans(3), David J. Robbins(3), Alexandra Neill(2), J. Zhang(2), Nebojša Janković(1), P. Dobrosz(1), S.J. Bull(1), J. Zhang(1), V. Higgs(1), S. Bull(1), Junqiu Zhang(1)