M. Juhel

STMicroelectronics (France) — France

Engineering · Physical Sciences

5h-index105citations11works0.02yr avg
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Research Topics

Ion-surface interactions and analysis(8), Integrated Circuits and Semiconductor Failure Analysis(6), Diamond and Carbon-based Materials Research(3), Analytical chemistry methods development(2), Silicon and Solar Cell Technologies(2)

Publications11 total

Point and extended defect interaction in low – high energy phosphorus implantation sequences
Materials Today Proceedings·2018· 1 cited
An analyis of trace metal contaminants on silicon surface by VPD‐ToF‐SIMS and VPD‐SIMS: towards 1E6‐1E7at/cm <sup>2</sup> detection limits
Surface and Interface Analysis·2010· 2 cited
Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source
Applied Surface Science·2008· 5 cited
Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates
Applied Surface Science·2008· 3 cited
Post electrochemical Cu deposition anneal impact on stress-voiding in individual vias
Microelectronic Engineering·2008· 4 cited
Fragmentation of molecular compounds on silicon wafers and low dielectric constant materials studied by time‐of‐flight secondary ion mass spectrometry using a polyatomic ion source
Surface and Interface Analysis·2008· 2 citedOpen Access
Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
Journal of The Electrochemical Society·2008· 48 citedOpen Access
Copper Surface Analysis with ToF-SIMS: Spectra Interpretation and Stability Issues
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2007· 1 cited
Shallow Junction Engineering by Phosphorus and Carbon Co-implantation: Optimization of Carbon Dose and Energy
MRS Proceedings·2007· 5 cited
SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV
Applied Surface Science·2006· 23 cited
SIMS depth profiling of SiGe:C structures in test pattern areas using low energy cesium with a Cameca IMS Wf
Applied Surface Science·2004· 11 cited

Frequent Co-authors

C. Wyon(5), L.F.Tz. Kwakman(5), C. Trouiller(5), X. Ravanel(4), Didier Léonard(3), F. Laugier(2), P. Caubet(1), Tom Blomberg(1), R. Benaboud(1), Christophe Wyon(1), E. Blanquet(1), J. P. Gonchond(1), Philippe Bouvet(1), M. Gros‐Jean(1), J. Michailos(1), C. Richard(1), Blaise Iteprat(1), D. Delille(1), M. Hopstaken(1), N. Cagnat(1)