L.F.Tz. Kwakman

Engineering · Physical Sciences

12h-index704citations45works0.02yr avg
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Research Topics

Integrated Circuits and Semiconductor Failure Analysis(22), Electron and X-Ray Spectroscopy Techniques(17), Ion-surface interactions and analysis(13), Semiconductor materials and devices(7), Advanced Electron Microscopy Techniques and Applications(5)

Publications45 total

Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation
Ultramicroscopy·2017· 22 cited
Developments on a SEM-based X-ray tomography system: Stabilization scheme and performance evaluation
Review of Scientific Instruments·2017· 8 cited
Plasma-FIB Sample Preparation for X-Ray Tomography of 3D-IC Interconnects
Proceedings - International Symposium for Testing and Failure Analysis·2016· 1 cited
Towards laboratory x-ray nanotomography: instrumental improvements on a SEM-based system
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2016
Surface contamination and electrical damage by focused ion beam: conditions applicable to the extraction of TEM lamellae from nanoelectronic devices
Semiconductor Science and Technology·2015· 9 cited
Xe+ FIB Milling and Measurement of Amorphous Silicon Damage
Microscopy and Microanalysis·2013· 67 citedOpen Access
A Comparison of Xenon Plasma FIB Technology with Conventional Gallium LMIS FIB: Imaging, Milling, and Gas-Assisted Applications
Microscopy and Microanalysis·2011· 10 citedOpen Access
A Novel Method for Solar Cell Characterization Combining Electron Beam Induced Current Imaging (EBIC) and Focused Ion Beam Techniques (FIB)
EU PVSEC·2010Open Access
Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source
Applied Surface Science·2008· 5 cited
Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates
Applied Surface Science·2008· 3 cited
Fragmentation of molecular compounds on silicon wafers and low dielectric constant materials studied by time‐of‐flight secondary ion mass spectrometry using a polyatomic ion source
Surface and Interface Analysis·2008· 2 citedOpen Access
Copper Surface Analysis with ToF-SIMS: Spectra Interpretation and Stability Issues
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2007· 1 cited
3-D Defect Localization by Measurement and Modeling of the Dynamics of Heat Transport in Deep Sub-Micron Devices
Proceedings - International Symposium for Testing and Failure Analysis·2007· 9 cited
X-ray metrology for advanced silicon processes
Applied Surface Science·2006· 11 cited
SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150eV
Applied Surface Science·2006· 23 cited
In-line TEM sample preparation and wafer return strategy for rapid yield learning
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006· 6 cited
The Effectiveness of OBIRCH Based Fault Isolation for Sub-90nm CMOS Technologies
Proceedings - International Symposium for Testing and Failure Analysis·2005· 12 cited
How effective are failure analysis methods for the 65nm cmos technology node?
2005· 8 cited
The Role of a Physical Analysis Laboratory in a 300 mm IC Development and Manufacturing Centre
AIP conference proceedings·2005· 5 citedOpen Access
OBIRCH Driven Failure Analysis for Process Development of 120 nm to 65 nm Technology Nodes
Proceedings - International Symposium for Testing and Failure Analysis·2004· 3 cited
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Frequent Co-authors

C. Wyon(12), R. Pantel(8), E.H.A. Granneman(8), D. Delille(6), M. Juhel(5), C. Trouiller(5), J.J.C. Geerlings(4), J. Los(4), M. de la Bardonnie(4), M. Lamy(4), X. Ravanel(4), P.W. van Amersfoort(3), S. Jullian(3), F. Lorut(3), P. Bleuet(3), H.W. Piekaar(3), Kin P. Cheung(3), D. Huibregtse(3), Didier Léonard(3), L. Clément(2)