Frank M. Steranka

Soraa (United States) — United States

Physics and Astronomy · Physical Sciences

12h-index1.3kcitations20works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(17), Semiconductor Quantum Structures and Devices(11), Semiconductor materials and devices(6), Semiconductor Lasers and Optical Devices(6), ZnO doping and properties(5)

Publications20 total

Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
Applied Physics Letters·2015· 221 cited
High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes
Applied Physics Letters·2014· 40 cited
Bulk GaN based violet light-emitting diodes with high efficiency at very high current density
Applied Physics Letters·2012· 113 cited
Performance of high‐power III‐nitride light emitting diodes
physica status solidi (a)·2008· 156 cited
Performance of high-power III-nitride light emitting diodes
2008· 13 cited
Diodes, Light‐emitting
2007
Very High-efficiency Transparent-substrate (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/GaP Light-emitting Diodes
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics·2005
Diodes, Light‐emitting
digital Encyclopedia of Applied Physics·2004
Light‐Emitting Diodes
digital Encyclopedia of Applied Physics·2003· 13 cited
High-power GaN-based LEDs for lighting and display applications
2003· 1 cited
High Power LEDs - Technology Status and Market Applications
physica status solidi (a)·2002· 224 cited
Performance of High-Power AlInGaN Light Emitting Diodes
physica status solidi (a)·2001· 111 citedOpen Access
High-power AlInGaN light-emitting diodes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2001· 1 cited
<title>High-performance AlGaInP light-emitting diodes</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1997· 4 cited
Chapter 3 AlGaAs Red Light-Emitting Diodes
Semiconductors and semimetals·1997· 14 cited
Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers
Applied Physics Letters·1996· 60 cited
Highly reliable and efficient semiconductor wafer-bondedAlGaInP/GaP light-emitting diodes
Electronics Letters·1996· 53 cited
Temperature-dependent minority-carrier lifetime measurements of red AlGaAs light emitting diodes
Journal of Electronic Materials·1995· 5 cited
Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P/GaP light-emitting diodes
Applied Physics Letters·1994· 258 cited
Luminescence studies of photoexcited electron-hole plasmas in silicon and germanium
PhDT·1985

Frequent Co-authors

M. G. Craford(8), D. A. Steigerwald(7), Michael R. Krames(7), D.C. DeFevere(6), F. A. Kish(5), Lou W. Cook(5), Nathan F. Gardner(5), D. A. Vanderwater(4), P. Martin(4), Serge Rudaz(4), M. D. Camras(4), K. G. Park(3), Jingxi Yu(3), R. M. Fletcher(3), M. Misra(3), S. A. Stockman(3), Jonathan J. Wierer(3), Aurélien David(3), Michael Joseph Cich(3), Rafael I. Aldaz(3)